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検索結果 429 件

Physica status solidi C Current topics in solid state physics

Physica status solidi C Current topics in solid state physics
紙雑誌
Wiley-VCH<Z78-A185>
国立国会図書館
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Physica status solidi C Conferences and critical reviews

Physica status solidi C Conferences and critical reviews
紙雑誌
Wiley-VCH<Z78-A185>
国立国会図書館全国の図書館
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Nonlinear optical constants of ionic conductors : a study based on the Sheik-Bahae equation

Nonlinear optical constants of ionic conductors : a study based on the Sheik-Bahae equation
デジタル記事
2012-12Physica Status Solidi. C9 12p.2633-2636
全国の図書館
  • 掲載誌（ISSN）16101634 18626351

Nonlinear optical constants of ionic conductors : a study based on the Sheik-Bahae equation

Nonlinear optical constants of ionic conductors : a study based on the Sheik-Bahae equation
デジタル記事
Ikeda, Shosuke, Aniya, Masaru, 池田, 祥典, 安仁屋, 勝Wiley-VCH2012-12Physica Status Solidi. C9 12p.2633-2636
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Optical studies of hydrogenbonded dielectrics TlH2PO4

Optical studies of hydrogenbonded dielectrics TlH2PO4
デジタル記事
2009-01physica status solidi (c)6 1p.350-353
全国の図書館
  • 掲載誌（ISSN）16101634

Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes

Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes
記事
2008-05-13Physica status solidi. C, Current topics in solid state physics5 6p.2105-2107
全国の図書館
  • 掲載誌（ISSN）16101634

Atmospheric-pressure MOVPE growth of In-rich InAlN

Atmospheric-pressure MOVPE growth of In-rich InAlN
記事
2008-05physica status solidi. C5 6p.1571-1574
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  • 掲載誌（ISSN）16101634

Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere

Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere
記事
2008-05Physica status solidi. C5 6p.1765-1767
全国の図書館
  • 掲載誌（ISSN）16101634

Etching and optical deterioration of nitrogen-face of wurtzite InN in NH_3 ambient

Etching and optical deterioration of nitrogen-face of wurtzite InN in NH_3 ambient
デジタル文書・図像類
YAMAMOTO, A, SUGITA, K, NAGAI, Y, HASHIMOTO, AWiley-VCH Verlag2008-05Physica status solidi. C5 6p.1762-1764
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Atmospheric-pressure MOVPE growth of In-rich InAlN

Atmospheric-pressure MOVPE growth of In-rich InAlN
デジタル文書・図像類
HOUCHIN, Y, HASHIMOTO, A, YAMAMOTO, AWiley-VCH Verlag2008-05physica status solidi. C5 6p.1571-1574
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Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere

Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere
デジタル文書・図像類
SUGITA, K, NAGAI, Y, MATSUOKA, D, HASHIMOTO, A, HARIMA, H, YAMAMOTO, AWiley-VCH Verlag2008-05Physica status solidi. C5 6p.1765-1767
全国の図書館

Etching and optical deterioration of nitrogen-face of wurtzite InN in NH_3 ambient

Etching and optical deterioration of nitrogen-face of wurtzite InN in NH_3 ambient
記事
2008-05Physica status solidi. C5 6p.1762-1764
全国の図書館
  • 掲載誌（ISSN）16101634

Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates

Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates
記事
2007-06Physica status solidi. C4 7p.2441-2444
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  • 掲載誌（ISSN）16101634

Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates

Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates
デジタル文書・図像類
CHO, M.S, SAWAZAKI, N, SUGITA, K, HASHIMOTO, A, YAMAMOTO, A, ITO, YWiley-VCH Verlag2007-06Physica status solidi. C4 7p.2441-2444
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Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes

Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes
記事
2007-06physica status solidi (c)4 7p.2768-2771
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  • 掲載誌（ISSN）16101634

Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures

Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures
紙記事
Ueda, M, Hayashi, K, Kondou, T, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, TWILEY-V C H VERLAG GMBH2007physica status solidi (c)4 7p.2826-2829
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Carrier capture and escape processes in (In,Ga)N singlequantum-well diode under forward bias condition by photoluminescence spectroscopy

Carrier capture and escape processes in (In,Ga)N singlequantum-well diode under forward bias condition by photoluminescence spectroscopy
記事
2006-05Physica status solidi. C, Current topics in solid state physics3 6p.2203-2206
全国の図書館
  • 掲載誌（ISSN）16101634

Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes

Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes
記事
2006-02Physica status solidi. C, Current topics in solid state physics3 3p.589-593
全国の図書館
  • 掲載誌（ISSN）16101634

Editorial: phys. stat. sol. (c) 3/1

Editorial: phys. stat. sol. (c) 3/1
デジタル記事
2006-01physica status solidi (c)3 1p.7-8
全国の図書館
  • 掲載誌（ISSN）16101634

The adsorption of L‐cysteine on Au(110) in ultra‐high vacuum and electrochemical environments

The adsorption of L‐cysteine on Au(110) in ultra‐high vacuum and electrochemical environments
デジタル記事
2005-11-25physica status solidi (c)2 12p.4012-4016
全国の図書館
  • 掲載誌（ISSN）16101634