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Solid-state electronics

Solid-state electronics
紙記録メディア雑誌
Pergamon Press<Z53-F36>
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Materials science in semiconductor processing

Materials science in semiconductor processing
紙記録メディア雑誌
Pergamon<Z54-J458>
国立国会図書館全国の図書館
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Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation
紙記事
永野, 貴弥, 原, 龍太郎, 茂藤, 健太, 山本, 圭介, 佐道, 泰造Elsevier2023-10Materials Science in Semiconductor Processing165p.107692-
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Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing

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デジタル記事
Kurokawa, Yasuyoshi, Sato, Kaisei, Shibata, Keisuke, Kato, Shinya, Miyamoto, Satoru, Gotoh, Kazuhiro, Itoh, Takashi, Usami, NoritakaElsevier2023-08-15Materials Science in Semiconductor Processing163p.107552-
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Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing

Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing
デジタル記事
2023-08-15Materials Science in Semiconductor Processing163p.107552-
全国の図書館
  • 掲載誌（ISSN）13698001

Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence

Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence
デジタル記事
2023-08Materials Science in Semiconductor Processing162p.107543-
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  • 掲載誌（ISSN）13698001

Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen

Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen
デジタル記事
2023-08Materials Science in Semiconductor Processing162p.107503-
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  • 掲載誌（ISSN）13698001

Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications

Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications
デジタル記事
2023-08Materials Science in Semiconductor Processing162p.107516-
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  • 掲載誌（ISSN）13698001

Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics

Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics
紙記事
Wen, Wei-Chen, 王, 冬, 中島, 寛, 山本, 圭介Elsevier2023-08Materials Science in Semiconductor Processing162p.107504-
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing
デジタル記事
2023-07Materials Science in Semiconductor Processing161p.107462-
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  • 掲載誌（ISSN）13698001

Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures

Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures
デジタル記事
2023-07Materials Science in Semiconductor Processing161p.107476-
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Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing
紙記事
片山, 慶太, 池上, 浩, 佐道, 泰造Elsevier2023-06-15Materials Science in Semiconductor Processing160p.107433-
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Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing
デジタル記事
2023-06Materials Science in Semiconductor Processing160p.107433-
全国の図書館
  • 掲載誌（ISSN）13698001

Microwave heating to form porous TiO2 layer on high-haze FTO film for dye-sensitized solar cell

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デジタル記事
Okuya, Masayuki, Suzuki, Kosuke, Toda, Kyosuke, Konishi, Naoma, Naito, KantaElsevier2023-05-06Materials Science in Semiconductor Processing163p.107582-
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  • 掲載誌（ISSN）13698001

Microwave heating to form porous TiO2 layer on high-haze FTO film for dye-sensitized solar cell

Microwave heating to form porous TiO2 layer on high-haze FTO film for dye-sensitized solar cell
デジタル記事
2023-05-06Materials Science in Semiconductor Processing163p.107582-
全国の図書館
  • 掲載誌（ISSN）13698001

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators
デジタル記事
2023-04Materials Science in Semiconductor Processing157p.107306-
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Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique
デジタル記事
2023-01Materials Science in Semiconductor Processing153p.107167-
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Anchoring the late first row transition metals with B12P12 nanocage to act as single atom catalysts toward oxygen evolution reaction (OER)

Anchoring the late first row transition metals with B12P12 nanocage to act as single atom catalysts toward oxygen evolution reaction (OER)
デジタル記事
2023-01Materials Science in Semiconductor Processing153p.107164-
全国の図書館
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Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing

Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing
デジタル記事
2022-12Materials Science in Semiconductor Processing152p.107124-
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Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors

Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors
デジタル記事
2022-08Materials Science in Semiconductor Processing146p.106669-
全国の図書館
  • 掲載誌（ISSN）13698001