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Carbon nitride nanostructures for sustainable energy production and environmental remediation (Nanoscience & nanotechnology series ; 51)

Carbon nitride nanostructures for sustainable energy production and environmental remediation (Nanoscience & nanotechnology series ; 51)
紙図書
edited by Kamel Abdelmoniem Mohamed Eid and Aboubakr M. AbdullahRoyal Society of Chemistry[2021]<PA225-D66>
国立国会図書館全国の図書館
  • 要約等...ational design and characterizati......res for energy and environmental remediation
  • 内容細目...nsional Carbon Nitrides for Thermal C......aphitic Carbon Nitride-based Chemiluminescent and Electrochemilu...... Porous Carbon Nitride Nanostructures......aphitic Carbon Nitride Nanostructures......aphitic Carbon Nitride-polymer Hybrid......ations; Atomic and Molecular Func......aphitic Carbon Nitride for Solar Cell......aphitic Carbon Nitride (gCN)-based De......Energy Storage and Production; Em......aphitic Carbon Nitride-based Material......tion of Carbon Nitride and Semiconductors for the Enhanc......nic Pollutants and Hydrogen Production
  • 件名Graphitic carbon nitride Nanostructures Renewable ener...

Electrical extractions of one dimensional doping profile and effective mobility for metal-oxide-semiconductor field-effect transistors (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)

Electrical extractions of one dimensional doping profile and effective mobility for metal-oxide-semiconductor field-effect transistors (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
紙記事
Hyunho Park, Kong-soo Lee, Dohuyn Baek 他<Z53-A375>Japanese journal of applied physics : JJAP50(1) (2) 2011.1p.01AA01-1～4
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Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: science and technology)

Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
In-Shik Han, Hyuk-Min Kwon, Jung-Deuk Bok 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB03-1～4
国立国会図書館全国の図書館

Direct measurement of back-tunneling current during program/erase operation of metal-oxide-nitride-oxide-semiconductor memories and its dependence on gate work function (Special issue: Solid state devices and materials)

Direct measurement of back-tunneling current during program/erase operation of metal-oxide-nitride-oxide-semiconductor memories and its dependence on gate work function (Special issue: Solid state devices and materials)
紙記事
Jun Fujiki, Shosuke Fujii, Naoki Yasuda 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DD07-1～5
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Atomistic design of guiding principles for high quality metal-oxide-nitride-oxide-semiconductor memories: first principles study of H and O incorporation effects for N vacancies in SiN charge trap layers (Special issue: Solid state devices and materials)

Atomistic design of guiding principles for high quality metal-oxide-nitride-oxide-semiconductor memories: first principles study of H and O incorporation effects for N vacancies in SiN charge trap layers (Special issue: Solid state devices and materials)
紙記事
Keita Yamaguchi, Akira Otake, Katsumasa Kamiya 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DD05-1～5
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Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices

Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices
紙記事
Masato Noborio, Michael Grieb, Anton J. Bauer 他<Z53-A375>Japanese journal of applied physics : JJAP50(9) (1) 2011.9p.090201-1～3
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A new method to extract the charge centroid in the program operation of metal-oxide-nitride-oxide-semiconductor memories (Special issue: Solid state devices and materials)

A new method to extract the charge centroid in the program operation of metal-oxide-nitride-oxide-semiconductor memories (Special issue: Solid state devices and materials)
紙記事
Shosuke Fujii, Naoki Yasuda, Jun Fujiki 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DD06-1～4
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Reference electrode-insulator-nitride-oxide-semiconductor structure with Sm2O3 sensing membrane for pH-sensor application (Special issue: Solid state devices and materials)

Reference electrode-insulator-nitride-oxide-semiconductor structure with Sm2O3 sensing membrane for pH-sensor application (Special issue: Solid state devices and materials)
紙記事
Jer-Chyi Wang, Tseng-Fu Lu, Hui-Yu Shih 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DL09-1～5
国立国会図書館全国の図書館

A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future ULSI devices: science and technology)

A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa 他<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DC01-1～6
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Investigation of device performance and negative bias temperature instability of plasma nitrided oxide in nanoscale p-channel metal-oxide-semiconductor field-effect transistor's (Special issue: Solid state devices and materials)

Investigation of device performance and negative bias temperature instability of plasma nitrided oxide in nanoscale p-channel metal-oxide-semiconductor field-effect transistor's (Special issue: Solid state devices and materials)
デジタル記事
In-Shik Han, Hee-Hwan Ji, Tae-Gyu Goo 他<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2628～2632
インターネットで読める国立国会図書館全国の図書館
  • 件名plasma nitrided oxide PNO negative b......harge positive oxide charge

Experimental study of physical-vapor-deposited titanium nitride gate with An n[+]-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Experimental study of physical-vapor-deposited titanium nitride gate with An n[+]-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Takahiro Kamei, Yongxun Liu, Kazuhiko Endo 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DC14-1～5
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Photocatalytic functional materials for environmental remediation

Photocatalytic functional materials for environmental remediation
紙図書
edited by Alagarsamy Pandikuma, Kandasamy JothivenkatachalamJohn Wiley & Sons, Inc.2019<PA51-D86>
国立国会図書館
  • 要約等"This book gathers and reviews a wide......rials science, and engineering - ......red double hydroxides, metal-organic frameworks, and polymer nanoco......on of carbon dioxide and degradation of organic pollut...
  • 内容細目Titania and carbon nanomat......ts using metal oxide semiconductors Contemporary a......ier mechanisms and photocatalytic......red double hydroxide towards photoc......separable iron-oxide based nanocomp......aphitic carbon nitride based nanostru......on of carbon dioxide
  • 件名...pects Carbon dioxide mitigation

Nanoscale wet etching of physical-vapor-deposited titanium nitride and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect transistor fabrication (Special issue: Microprocesses and nanotechnology)

Nanoscale wet etching of physical-vapor-deposited titanium nitride and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect transistor fabrication (Special issue: Microprocesses and nanotechnology)
デジタル記事
Yongxun Liu, Takahiro Kamei, Kazuhiko Endo 他<Z53-A375>Japanese journal of applied physics : JJAP49(6) (2) 2010.6p.06GH18-1～5
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Photoelectrochemical solar fuel production : from basic principles to advanced devices

Photoelectrochemical solar fuel production : from basic principles to advanced devices
紙図書
Sixto Giménez, Juan Bisquert, editors.Springer[2016]<PA181-B37>
国立国会図書館
  • 要約等...eous solutions and the reaction m......mation of the band structure of the semiconductors and carrier dynami......or. The third, and last section c......s in materials and engineered structures to opti...
  • 内容細目...istic Concepts and Catalyst Design Hydrogen and CO2 Reduction ......ns: Mechanisms and Catalysts Part......Definitions, Standards and Protocols Inte......on: Principles and Applications o......III: Materials and Devices Multinary Metal Oxide Photoelectrodes Non-Oxide materials (Nitrides, Chalcogenides and Arsenides) Com......rial Synthesis and Screening of Oxide Materials for ...... Architectures and Tandem Devices Dye Sensitized Phot...

Complementary metal-oxide-semiconductor ion-sensitive field-effect transistor sensor array silicon nitride film formed by catalytic chemical vapor deposition as an ion-sensitive membrane (Special issue: Molecular electronics and bioelectronics)

Complementary metal-oxide-semiconductor ion-sensitive field-effect transistor sensor array silicon nitride film formed by catalytic chemical vapor deposition as an ion-sensitive membrane (Special issue: Molecular electronics and bioelectronics)
デジタル記事
Yuji Kagohashi, Hiroaki Ozawa, Shigeyasu Uno 他<Z53-A375>Japanese journal of applied physics : JJAP49(1) (2) 2010.1p.01AG06-1～5
インターネットで読める国立国会図書館全国の図書館

Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devices

Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devices
デジタル記事
Chih-Feng Huang, Bing-Yue Tsui, Chih-Hsun Lu<Z53-A375>Japanese journal of applied physics : JJAP47(2) (1) 2008.2p.872～878
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Device performance and reliability characteristics of tantalum-silicon-nitride electrode/hafnium oxide n-type metal-oxide-semiconductor field-effect transistor depending on electrode composition

Device performance and reliability characteristics of tantalum-silicon-nitride electrode/hafnium oxide n-type metal-oxide-semiconductor field-effect transistor depending on electrode composition
デジタル記事
Hokyung Park, Man Chang, Minseok Jo 他<Z53-A375>Japanese journal of applied physics : JJAP48(11) 2009.11p.116506-1～3
インターネットで読める国立国会図書館全国の図書館

Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
デジタル記事
Wen-Cheng Lo, Shien-Yang Wu, Sun-Jay Chang 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(3A) (通号 647) 2007.3p.1124～1128
インターネットで読める国立国会図書館全国の図書館
  • 出版者（掲載誌）...titute of Pure and Applied Physics

Extraction of interface-states energy distribution in nitrided and pure gate dielectrics for metal oxide semiconductor field effect transistor applications

Extraction of interface-states energy distribution in nitrided and pure gate dielectrics for metal oxide semiconductor field effect transistor applications
デジタル記事
Younghwan Son, Seungwon Yang, Bong Chan Kim 他<Z53-A375>Japanese journal of applied physics : JJAP48(5) (1) 2009.5p.054502-1～4
インターネットで読める国立国会図書館全国の図書館
  • 参照...athin (1.6 nm) nitride/oxide stack gate die......ma nitridation and LPCVD technologies Fast and slow border tr......noise in metal-oxide-semiconductor ......-detrapping at oxide-silicon interface A reliable ...

Improvement in mobility and negative-bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack dielectrics (Special issue: Solid state devices and materials)

Improvement in mobility and negative-bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack dielectrics (Special issue: Solid state devices and materials)
紙記事
Shiyang Zhu, Anri Nakajima, Takuo Ohashi 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(4B) (通号 650) (Special Issue) 2007.4p.1874～1878
国立国会図書館全国の図書館
  • 件名atomic layer deposition carrier mobility NBTI silicon nitride stack gate dielectric
  • 出版者（掲載誌）...titute of Pure and Applied Physics