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デジタル記事
2020-10-22Proceedings of International Exchange and Innovation Conference on Engineering & Sciences (IEICES)6p.7-13
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  • 要約等Here we report the growth of elemental B on W(110) surface by low energy electron diffraction and Auger electron spectroscopy study with multilayer relaxation of W(110) surface. Our study rev......rlayer spacing of Δd12/d = -1.2 ...... in the second and third interlayer spacing of Δd23/d = 0.7 ± 1.5% and Δd34/d = 0.5 ±......espectively in W(110). And we have obtained a Pendry Rp = 0.20 for W(110). Boron produces a......) structure on W(110) after annealin......ich is sustainable up to 1300 ˚......ve the way for surface structure determination of B on W(110).
  • 標準番号(その他)https://hdl.handle.net/2324/4102456
  • 件名Surface relaxation Tungsten Boron LEED AES

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