検索結果 1 件
Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions
デジタル記事
インターネットで読める全国の図書館
- 要約等Displacement effects induced by low-energy ion irradiation in silicon have been investigated theoretically. Instantaneous energy of an incident ion during its slowing-down process has been obtained as a function of the penetratio......pth and the ordinal number of displacement collisions by solving a set of integral equations. From these re...... as a function of the ordinal number of displacement collisions is estimated. ......mean free path of the incident ion at a......specific depth in silicon is also estima......ed for several initial energy va...... transfer rate into atomic displacement collisions and the density of...
- 件名Low-energy ions Displacement effect Energy transfer rate Deposite...
- 出版者（掲載誌）Faculty of Information Science and Electrical Engineering, Kyushu University
検索結果は以上です。