検索結果 3 件
デジタル記事
インターネットで読める全国の図書館
- 件名power reduction leakage power SRAM process variation delay variation random variation redundancy spare row spare column
- 一般注記International Sym......8 : Bangalore, India : August 11-13, 2008
- 関連情報International Sym......ics and Design || 2008 || p93-98 http://......kyushu-u.ac.jp/index-j.html http://www.islped.o...
デジタル記事
インターネットで読める全国の図書館
- 要約等...have been used in two ways: either to replace too leaky cells to reduce leakage, or to substitute faulty cells to improve yield. In contrast, we f......ide thickness (Tox) for SRAM transistors at design time to reduce leakage, and then subs......tute the resulting too slow cells by...... show that due to within-die delay variation of SRAM cells only a f......late target timing at higher Vth or Tox; we carefully......se the Vth and Tox values such that the original memory timing-yield remains intact for a negligible extra delay. On a commerci......m process assuming 3% variation in SRAM cell delay, we obtained 47% leakage redu...
- 件名power reduction leakage power SRAM process variation delay variation random variation redundancy spare row spare column
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