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- 要約等...calculations using model cluster......e or an O atom in SiO<SUB>2</SUB......that the diffusing oxygen in SiO<SUB>2</SUB> is primarily in a molecular form. The computa...
- 件名silicon oxidation diffusion mechanism molecular oxygen activation energy theoretical...
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226647
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- 内容細目Diffusion and point defects in silicon materials Hart......unctional modeling of defects and impurities in silicon materials José Coutinho 著 Electrical......nd solar grade silicon Anthony R. Pea......h 著 Control of intrinsic point defects in single-crystal Si ......islocations during silicon crystal growth......r solar cells Bing Gao, Koichi Kakimoto 著 Oxygen precipitation in silicon Gudrun Kissinger 著 Defect characterization in silicon by electron-beam-induced current and cathodoluminescence techniq......and impurities in Si materials G......da 著 Defect engineering in silicon materials Werner Bergholz 著
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- 要約等The interactions betw......n implantation in silicon have been investigated. The interactions between the oxygen atoms in a CZ Si wafer ......nd the defects introduced during annealing after implant...... are discussed in terms of the a......f the defects. Oxygen atoms are foun......to be gettered in two different regions in the implanted ......ers. A shallow oxygen peak appears in regions near t.......5 μm). A deep oxygen peak is also o......fects, which mainly consist of e......tion networks. In this case, the gettered oxygen content is not especially influenced by the......n the gettered oxygen amount and the mismatch stres...
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226674
- 出版者（掲載誌）...cs through the Institute of Pure and Applied Ph...
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- 要約等...ethod for removing oxide film fr......the surface of silicon wafers using an inert gas fusion ...... precise determination of bulk oxygen within the wafer. A silicon wafer was cut ......m) and dropped into a graphite c......e. The treated silicon sample was tak......crucible and maintained again with the holder of the oxygen analyzer. The ......C. The treated silicon sample was dropped into the heated g......the trace bulk oxygen in the wafer was measured using the inert gas fusion infrared absorpti......iations of the oxygen in silicon wafer samples ......ilm were determined to be 0.8% for 9.8 × 10<SUP...
- 参照Gas Fusion Analysis of Oxygen in Silicon: Separation of......titative determination of oxygen in silicon by combination of FTIR-spectroscopy, inert gas fusion ......copy Chapter 4 Oxygen Concentration ......Techniques for Oxygen in Silicon 予備加熱表面酸化膜除去／スズ添加法による鋼中微量酸素の定量...
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- 要約等...nonequilibrium oxygen plasma, low-temperature silicon trench oxidation is examined under the co......lications. The silicon oxidation has ......hows a maximum in a far downstre......the microwave window. The silicon trench oxidation mapping clearly demon......urs along the line of the substr......sma potential. In particular, silicon trench bottom ......o the negative oxygen ions in downstream. </jats:p>
- 参照...s and metals using a multipole p......eliable ultrathin silicon oxide film for......temperature by oxygen radical generated in high-density k......y low pressure oxygen plasma Microwa......oxidation Modeling CMOS tunneling currents through ultrathin gate oxide due......and hole tunneling Assessment of......e oxidation of silicon using a microwave p......mation of SiO2 in an RF Generated Oxygen Plasma: I . Th......ow 10 mTorr A kinetics study of ......a oxidation of silicon Analysis of ch......acteristics of silicon metal/insulator/semicon......ture of O(D21) in highly Ar or K......c oxidation of silicon in oxygen plasma A comparativ...
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- 件名Si oxide defects atom transport oxidation first-principles calculation
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226711
- 参照Extension of silicon emission model to silicon pillar oxidati......tion mechanism Influence of Oxygen Concentration ...... Wafer Surface in Si Emission on......ion at SiO2/Si interfaces during silicon thermal oxidation
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- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226788
- 参照Mechanical strength of silicon crystals as a ......unction of the oxygen concentration Minority carrier l......time of p-type silicon containing oxygen precipitates: influence of injection level a......otoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers Investigation of Ostwald ripening in nitrogen doped Czochralski silicon Intrinsic Gettering of Copper in Silicon Wafers Time-lag in nucleation of ......e precipitates in silicon due to high te......ature preannealing Gas flow effe......elt convection in Czochralski silicon growth Impact of Defects in Silicon Substrate on F......chralski-grown silicon crystals Grown-in microdefect...
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- 要約等Catalysis remains a key technology in a huge number of industrial processes in the 21st centu......ls such as platinum and palladiu......name suggests, in plentiful supp......h on their use in catalysis has,......lly, lagged behind. As researche...... and companies increasingly look for wa......prove the sustainability of thei......been a renewed interest in these earth-ab......ents. Highlighting the top ten m...... various roles in modern synthet......l be of use to industrial and ac......udents with an interest in catalysis and sustainability
- 内容細目...Sodium Species in Molecular Orga...... Synthesis 1.1 Introduction and ...... Species as a Single Metal Catal......ve Cross- coupling with Hydrosil.......5.1 Catalytic Silicon-Oxygen Bond Formation.......5.2 Catalytic Silicon-Carbon Bond Fo......sium Compounds in Organic Synthe......ecent Advances in the Stoichiome...... Complexes 3.1 Introduction 3.2 ......um Systems 4.1 Introduction: Cri......t Developments in Titanium Chemi...... Catalysis 5.1 Introduction 5.2 Preparation and...
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- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226704
- 参照...ects formation in silicon Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si......on of nitrogen-oxygen donors in N-doped Czochralski-silicon crystal Small ......neutron scattering from oxygen precipitates in silicon Effect of nitr......n denuded zone in Czochralski silicon wafer Effects of nitrogen doping on the dissolution of oxygen precipitates in Czochralski silicon during rapid thermal annealing Oxygen precipitation in silicon during CMOS processing: an FTIR micr......tial variation in defect formati......th profiles of interstitial oxygen concentrations in silicon subjected to three-st...
- 出版者（掲載誌）...cs through the Institute of Pure and Applied Ph...
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- 要約等The activation energy for oxygen diffusion in strained silicon crystal is investigated using the hybrid qu......ulation scheme in combination with the ......al region containing the oxygen atom, while the classical inter-atomic pote......%. We thereby find that the acti......d 0.2 eV depending sensitively o......d far from the oxygen atom in the system con......sms of the strain-dependence of ......ed through combined analyses about the atomic a...
- 件名diffusion oxygen silicon activation energy stress depe...
- 参照...iffusion of Li in Graphite by Alternating Vertical Elec......ulation Study Linear scaling algorithm of ......elated overlapping domains Enhanced Si–O Bond Breaking in Silica Glass b......y Cu Diffusion in Amorphous Ta₂O₅ Studied with ...
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- 要約等...e performed to investigate the p......lar and atomic oxygen inside Si and SiO......tions were obtained for both Si ....../SUB> clusters including an O<SUB>2</S......e or an O atom in the spin singlet or triplet state. The spin triplet O<SUB>......most favorable in SiO<SUB>2</SUB>, while the spin singlet O atom is dominant in Si. The diffus......outside to the inside of SiO<SUB......SUB>2</SUB>/Si interface and the......SUB>2</SUB>/Si interface were also examined by estimating for their energy barriers.
- 件名silicon oxidation atmic oxygen spin electronic state theoretical ...
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226654
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- 要約等Oxygen (O)-terminated nanocrystalline silicon (nc-Si) films ......ere prepared using silicon evaporation in an ultra-high vacuum with oxygen and argon radi......drogen (H)-termination of the nc......ment was tried in this work. The......aracterized by infrared (IR) abs......n measurements in order to investigate the s......state of nc-Si in the films, whi......the Si-O bonds in the nc-Si film......strong photoluminescence (PL) wi......from the H-terminated nc-Si. It ......i-O related luminescence. [DOI: 10.1380/ejssnt....
- 件名nanocrystalline silicon grain size silicon evaporation oxygen radical annealing
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- 要約等The minimum size of oxygen precipitates within Czochralski-gr......y light scattering tomography (L......ectness of the intensity measure......t, because the intensity is exac......assure precise intensity measure......ately adjusted intensity and a w......ll-shaped focusing of the laser ......re realized by instrument enhancement for illumination, and anal...... and noise elimination from the light scattering tomograms were installed in a computer. Wi......d system, the minimum diameters of oxygen precipitates in CZ Si wafers d......tatively determined using 1.06 μm radia...... compared with oxygen precipitates which were direc...
- 件名CZ silicon crystals ultrafine oxygen precipitates
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226689
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- 件名SIMS Infrared absorption
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- 要約等The precipitate density of interstitial oxygen in CZ silicon after nucleati......ment was determined by investigating its crystal nature. The oxygen precipitate density in the vacancy-dominant crystal reg......gher than that in the interstitial-silicon-dominant region. In addition, the oxygen precipitate de...... nucleation of oxygen precipitates o......the vacancy-dominant region and ......∼700°C for the interstitial-silicon-dominant crystal region.
- 件名oxygen precipitate nucleation defect CZ vacancy interstitial silicon
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- 要約等...lanted Si ions in GaAs were investigated. The...... out-diffusion into anneal cap w......e times larger in the front-end wafer than in others. This c...... keV. From the induced coupled p......lantation dose increased. From e......ist (P.R.) coating was confirmed......R. play a role in the oxidation process in the plasma.
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226652
- 出版者（掲載誌）...cs through the Institute of Pure and Applied Ph...
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- 要約等Solubilities of oxygen and carbon in solid silicon at 1673 K were determined by using a chemical eq......chnique. Solid silicon was heated at 1673 K in an oxygen atmosphere for......0 ks, and then oxygen content in the solid silicon equilibrated w......easured by the inert gas fusion-......Carbon content in the solid silicon equilibrated with silicon carbide after heating at 1673 K in an Ar–5%CO atm...... method. Comparing these solubility values in solid silicon with those in liquid silicon that were prev......oefficients of oxygen and carbon in silicon at the melting point were evaluated to be 0.85±0....
- 参照Silicon Refining by Solidification from Liquid Si–Zn Alloy and Floating Zone Method
- 参照...f Nitrogen and Oxygen in Semiconductor Silicon Carbon in silicon: Properties an......s Diffusion of Oxygen in Silicon The solubility of carbon in pulled silicon crystals Gener......l Oxidation of Silicon Effect of Micr......Growth Rate on Oxygen Microsegregati......t Distribution in Czochralski‐Grown Silicon Solubility and......Coefficient of Oxygen in Silicon Oxygen Solubilities in Si Melt:Influence of Sb A......urity Elements in Germanium and Silicon* Oxygen segregation in Czochralski silicon growth Carbon solubility in solid and liquid silicon—A review with ...... out-diffusion in silicon Diffusion of Carbon-14 in Sil...
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- 要約等The effect of oxygen (O<SUB>2</SUB>......h</SUB>) shift in gallium arseni......e fabricated using ion implantation, was investigated. An ......plasma process in barrel type re......UB> difference in MESFETs betwee......were processed in the same batch......al analyses, using secondary ion......ord backscattering spectrometry ......the key factor in the <I>V</I><S......not by the etching of the FET ch......oceeded by pulling up the substrate atoms and increased vacancy type defects in the channel.
- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226645
- 出版者（掲載誌）...cs through the Institute of Pure and Applied Ph...