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紙デジタル記事
インターネットで読める国立国会図書館全国の図書館
- 要約等A transient global model was used to obtain the solution of a thermal field within the entire furnace during a unidirectional solidification process for photovoltaics. The melt-solid interface shape was obtained by a dynamic interface tracking method. The thermal stress distribution in the silicon ingot was solved using the displacement-based thermo-elastic stress model. Furthermore, the relaxation of stress and multiplication of dislocations were performed by using Haasen-Alexander-Sumino model (HAS model), The results revealed that levels of both residual stress and dislocation density are higher in the peripheral, bottom region...
- 件名Computer simulation multicrystalline silicon Heat transfer Solidification Stress Dislocation
- 著者標目Xuejiang Chen Satoshi Nakano Lijun Liu
デジタル記事
インターネットで読める全国の図書館
- 件名Computer simulation multicrystaline silicon Heat transfer Solidification Stresses Dislocation
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