検索結果 8 件

図書
Yutaka Yoshida, Guido Langouche editorsSpringerc2015<PA431-B169>
国立国会図書館
  • 内容細目Diffusion and point defects in silicon materials Hartmut Bracht......unctional modeling of defects and impurities in silicon materials José Coutinho 著 Electrical......h 著 Control of intrinsic point defects in single-crystal Si ......al analysis of impurities and dislocations during silicon cryst......r solar cells Bing Gao, Koichi K...... precipitation in silicon Gudrun Kissinger 著 Defect characterization in silicon by electron-beam-induced current and cathodoluminescence techniq......dy defects and impurities in Si materials Guido Langouch......shida 著 Defect engineering in silicon materials Werner Bergholz 著
図書
Paolo M. Ossi, editor.Springer[2018]<ND451-B65>
国立国会図書館全国の図書館
  • 要約等...s and progress in understanding both the fund......ence of lasers interactions in materials science, as we......phasis on emerging applications ......irradiation of materials by pulsed lase...... of the processing conditions, l......ion can result in efficient mate......m atomically-thin 2D materials to microstruct...... employ lasers in materials science, spanning such different disciplines as photonics......taics, and sensing, to biomedical applications.
  • 内容細目Intro; Preface; C......thesis, Processing, and Spectros......f Atomically-Thin Two Dimensional Materials; 1.1 Introduction; 1.2......Key Challenges in the Synthesis ......f Atomically-Thin 2D Materials with Controlla......sis and Processing of 2D Materials; 1.3.1 Pulsed ......position of 2D Materials; 1.3.2 Laser T......tom Up" Defect Engineering of 2D Crystals......s Growth of 2D Materials by Laser Vapor...... 1.3.4 Laser Thinning of Layered Two-Dimensional Materials 1.3.5 Laser Co......wo-Dimensional Materials1.3.6 Laser Cry......tion and Annealing of TMDs; 1.3.7 Laser-Induced Phase Con......sis and Processing of Atomically-Thin 2D Materi...
  • 件名Materials--Effect of las......rs on. Lasers--Industrial applications. Materials science. Technology & Engineering--Material Scie....... Technology & Engineering--Manufacturing. Electronic devices & materials. Plasma physic......ysics) Tool making. Technology & Engineering--Lasers & Phot...... & holography. Materials. Optics, Laser......and Electronic Materials. Atoms and Molecules in Strong Fields, Laser Matter Interaction. Surface and Interface Science, Thin Films. Manufacturing, Machines, Tools.
記事
Mitsuhiro Asato, Toshiya Mizuno, Toshiharu Hoshino 他<Z53-J286>Materials transactions42(11) 2001.11p.2216~2224
国立国会図書館全国の図書館
  • 件名...-potential Korringa-Kohn-Rostoke......mation local spin density approx......urity-impurity interaction energ......ility limit of impurities in metal phase diagram
  • 著者標目Mitsuhiro Asato Toshiya Mizuno Toshiharu Hoshino
  • 出版者(掲載誌)Sendai : The Japan Institute of Metals and Materials ; 2001-
デジタル記事
Guang-Hong Lu, Masanori Kohyama, Ryoichi Yamamoto<Z53-J286>Materials transactions42(11) 2001.11p.2238~2241
国立国会図書館全国の図書館
  • 要約等...cture of Al grain boundary with ......ted by first principles pseudopo......ds the neighboring Al atoms, forming the metallic-......t character mixing bonds. These ......s, such as sliding under stress....... be classified into ‘bond mobili......of the neighboring Al atoms, forming a metallic-co......t character mixing bond. Other Al–S bonds in the boundary m...... is classified into ‘bond mobility model’ or ‘d...
  • 件名first principles pseudopotential impurity segregation aluminum grain boundary
  • 参照First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon Effects of Impurities on an Al Grain Boundary Effec......Ga on an Al Grain Boundary: A First-Principles Computational Tensile T...
デジタル記事
S. Vannarat, Marcel H.F. Sluiter, Yoshiyuki Kawazoe<Z53-J286>Materials transactions, JIM40(11) 1999.11p.1295~1300
国立国会図書館全国の図書館
  • 要約等The formation enthalpy of the In<SUB>Ga</SUB> defect in GaAs was calculated <I>ab initio</I> by a h...... method consisting of an atomistic- and a continuum calculation......ed elastic strain energy was obtained from a linear elastic continuum calculation...... solubility of InAs in GaAs at room t......iscibility gap in the solid solu......ase were determined from the def......he results are in good agreement......o of epitaxial InAs monolayers g......rates is determined. The stability of such InAs layers with ......to the Ga-rich In<I><SUB>x</SUB></I>Ga<SUB>1−<I...
  • 参照...tent Equations Including Exchange and ......fects Onset of incoherency and defect introduction in the initial stages of...... of highly strained In<i>x</i>Ga1−<i>......Composition of InAs quantum dots...... evidence for (In,Ga)As alloying The density f......ts Norm-conserving and ultrasoft......ents Special points for Brillouin-zone integrations Effect of strain on surface morphology in highly strained InGaAs films Inhomogeneous Ele...... MBE growth of InAs on (001)GaAs...... for diagonalising large matrice......hemes for<i>ab initio</i>total-e......calculations using a plane-wave ......eudopotentials in a generalized eigenvalue form...
  • 出版者(掲載誌)Sendai : The Japan Institute of Metals
デジタル記事
2000-01Materials and Manufacturing Processes15 1p.155-156
全国の図書館
  • 件名Industrial and Manufacturing Engineering Mechanical Engineering Mechanics of Materials General Materials Science
  • 参照Supergravity-Induced Separation of Oxide and Nitride Inclusions from Inconel 718 Superalloy Melt
  • 出版者(掲載誌)Informa UK Limited
図書
Yutaka Yoshida, Guido Langouche, editorsSpringerc2015
全国の図書館
  • 一般注記Includes bibliographical referen...
  • 関連情報Lecture notes in physics
  • 掲載誌Lecture notes in physics
図書
edited by Clyde L. BriantMarcel Dekkerc1999
全国の図書館
  • 件名Metals -- Inclusions Metals -- Mechanical properties Contamination (Technology)
  • 件名(識別子)Metals -- Inclusions Metals -- Mechanical properties Contamination (Technology)
  • 一般注記Includes bibliographical references and index

検索結果は以上です。