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Semiconductor devices for electronic tuners (Japanese technology reviews. Electronics ; vol. 13)

Semiconductor devices for electronic tuners (Japanese technology reviews. Electronics ; vol. 13)
紙図書
by Seiichi WatanabeCRC Press2019<ND621-D1>
国立国会図書館
  • 内容細目.... Evolution of Electronic Tuners 1.2. Expectations of Electronic Tuners 1.3. Re...... Semiconductor Devices 1.4. Examples ...... Lifetime 3.4. Devices and Characteri......MESFETs 4.1.4. Electronic Tuners and Low-Distortion Dua...

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Masayuki Saeki, Hiroaki Arimura, Naomu Kitano 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA01-1～4
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AlGaN/GaN-HEMTs on SiC with SiN passivation film grown by thermal CVD (Electron devices)

AlGaN/GaN-HEMTs on SiC with SiN passivation film grown by thermal CVD (Electron devices)
紙記事
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報108(121) 2008.7.9-11p.341～345
国立国会図書館

High breakdown voltage of 10400V in AlGaN/GaN HFET with AlN passivation (Electron devices)

High breakdown voltage of 10400V in AlGaN/GaN HFET with AlN passivation (Electron devices)
紙記事
Daisuke Shibata, Hisayoshi Matsuo, Shuichi Nagai 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報108(121) 2008.7.9-11p.177～181
国立国会図書館全国の図書館

Applied superconductivity : handbook on devices and applications

Applied superconductivity : handbook on devices and applications
紙図書
edited by Paul Seidel.Wiley-VCH[2015]<MC171-B36>
国立国会図書館
  • 内容細目...uperconductive passive devices Applications i......ductor digital electronics Other applications.

Effects of nitride-based plasma pretreatment prior to SiNx passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates (Special issue: Solid state devices and materials)

Effects of nitride-based plasma pretreatment prior to SiNx passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates (Special issue: Solid state devices and materials)
紙記事
Ji Ha Kim, Hong Goo Choi, Min-Woo Ha 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DF05-1～3
国立国会図書館全国の図書館

Titanium oxide thin films prepared by plasma enhanced atomic layer deposition using remote electron cyclotron resonance plasma for organic devices passivation (Special issue: Dry process)

Titanium oxide thin films prepared by plasma enhanced atomic layer deposition using remote electron cyclotron resonance plasma for organic devices passivation (Special issue: Dry process)
デジタル記事
Byung-Woo Kang, Woong-Sun Kim, Chang-Mook Hwang 他<Z53-A375>Japanese journal of applied physics : JJAP49(8) (2) 2010.8p.08JG05-1～3
インターネットで読める国立国会図書館全国の図書館

Thermoelectric Energy Conversion Devices And Systems (Wspc Series In Advanced Integration And Packaging ; vol. 7)

Thermoelectric Energy Conversion Devices And Systems (Wspc Series In Advanced Integration And Packaging ; vol. 7)
紙図書
Kazuaki Yazawa, Je-Hyeong Bahk, Ali ShakouriWorld Scientific Publishing Company[2021]<MC131-D8>
国立国会図書館
  • 内容細目... Photonics and Electronics 2.1 Energy-Fr......tic losses 3.5 Passive Heat Transfer in Body Heat En...

High performance 50nm InAlAs/In0.75GaAs metamorphic high electron mobility transistors with Si3N4 passivation on thin InGaAs layer (Special issue: Solid state devices and materials)

High performance 50nm InAlAs/In0.75GaAs metamorphic high electron mobility transistors with Si3N4 passivation on thin InGaAs layer (Special issue: Solid state devices and materials)
デジタル記事
Seongjin Yeon, Kwangseok Seo<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2868～2871
インターネットで読める国立国会図書館全国の図書館

Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)

Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
紙記事
S. Arulkumaran, A. Imanishi, T. Egawa 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報103(160) 2003.7.1p.17～21
国立国会図書館全国の図書館

Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)

Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
紙記事
S. Arulkumaran, A. Imanishi, T. Egawa 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報103(163) 2003.7.1p.17～21
国立国会図書館

SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)

SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
紙デジタル記事
Min-Woo Ha, Young-Hwan Choi, Jiyong Lim 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(4B) (通号 650) (Special Issue) 2007.4p.2291～2295
国立国会図書館全国の図書館

Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon (Special Issue: Solid State Devices & Materials)

Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon (Special Issue: Solid State Devices & Materials)
デジタル記事
Akira Kojima, Nobuyoshi Koshida<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP42(4B) (通号 574) (Special Issue) 2003.4p.2395～2398
インターネットで読める国立国会図書館全国の図書館
  • 参照... a function of electronic aberration correction for mas...

Passivation effects of 100nm In0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors with a silicon nitride layer by remote plasma-enhanced chemical vapor deposition (Special issue: Solid state devices and materials)

Passivation effects of 100nm In0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors with a silicon nitride layer by remote plasma-enhanced chemical vapor deposition (Special issue: Solid state devices and materials)
紙デジタル記事
Sungwon Kim, Kyoungchul Jang, Gyungseon Seol 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(4B) (通号 650) (Special Issue) 2007.4p.2341～2343
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Microelectronics failure analysis : desk reference Seventh edition

Microelectronics failure analysis : desk reference Seventh edition
紙図書
edited by Tejinder GandhiASM International[2019]<ND371-D19>
国立国会図書館
  • 内容細目...ging tools for electronic device failure......ith active and passive voltage contra......ability of optoelectronic devices / Robert W. He......or counterfeit electronic parts / Bhanu ......e information. Electronics and failure analysis / Jerry...
  • 件名Electronics--Materials--T......uals, etc Microelectronics--Materials--T......uals, etc Microelectronics--Materials--D......, manuals, etc Electronic apparatus and ......, manuals, etc Electronic apparatus and ......nces--Testing. Electronics--Materials--Testing. Microelectronics--Materials--Defects. Microelectronics--Materials--Testing. Semicon...
  • 一般注記...ation" "EDFAS, Electronic Device Failure Analysis Socie...

Surface passivations of AlGaN/GaN HEMTs using remote-mode PECVD (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

Surface passivations of AlGaN/GaN HEMTs using remote-mode PECVD (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
紙記事
Jin Cherl Her, Hyun Jun Cho, Kwang Seok Seo<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報107(110) 2007.6.25-27p.81～83
国立国会図書館全国の図書館

Silicon-Nitride-Passivated Bottom-Up Single-Electron Transistors (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

Silicon-Nitride-Passivated Bottom-Up Single-Electron Transistors (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
紙記事
Guillaume Hackenberger, Yasuo Azuma, Shinya Kano 他<Z53-A375>Japanese journal of applied physics : JJAP52(11)(1):2013.11p.110101-1-5
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Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors (Special Issue: Solid State Devices and Materials)

Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors (Special Issue: Solid State Devices and Materials)
デジタル記事
Myounghoon Yoon, Taeho Kim, Daehee Kim 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP43(4B) (通号 591) (Special Issue) 2004.4p.1910～1913
インターネットで読める国立国会図書館全国の図書館
  • 要約等...ide-passivated devices by DC, RF and ......effects on the devices passivated by ......ormance of the devices, was analyzed ......ide-passivated devices, the BCB-passivated HEMTs exh...

Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma

Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
デジタル記事
Dawei Gao, Katsuhiko Furukawa, Hiroshi Nakashima 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP38(8) (通号 505) 1999.08p.4868～4871
インターネットで読める国立国会図書館全国の図書館
  • 要約等...ation layer of devices such as organic electrolumine...
  • 参照...ogen Alloy The electronic properties of plasma-deposite...

The ESD control program handbook (IEEE)

The ESD control program handbook (IEEE)
紙図書
Jeremy M Smallwood, Electrostatic Solutions Ltd, Southampton, Southampton, UKJohn Wiley & Sons, Inc.2020<ND416-D19>
国立国会図書館全国の図書館
  • 要約等... involved with electronics production wi...... semiconductor devices needs an understanding of ESD...
  • 内容細目...ged cables 2.7 Electronic models of ESD ...... ESD sensitive devices (ESDS) 3.1 Wha...... ESD sensitive devices? 3.2 Measuring......3.3.5 Discrete devices 3.3.6 The effe......sistors 3.4.12 Passive components 3.4......very sensitive devices 4.13 Controlling other ESD so...
  • 件名Electronic apparatus and ......ic discharges. Electronic apparatus and appliances--Pro...