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- 要約等Downflow etching of Si was studied using a microwave-excited discharge plasma of Ar/CF_4 mixtures under conditions that would produce less plasma-damage than that in our previo......s [M. Tsuji et al., Jpn. J. Appl Phys., 38, 6470 (1999)]. A long distance between the center of discharge and the substrate (20cm) was used in order to reduce plasma-damage of the Si surface. The maximum etching rate was about 700Å/min at a microwave power of 80W, an Ar flow rate of 2500 sccm, and a CF_4 flow rate of 300 sccm. A thin C_mF_n polymer was deposited along the edges of etched region at high CF_4 flow rates above about 100 sccm. It w...
- 著者標目Masaharu Tsuji Shinji Okano Atsushi Tanaka
デジタル記事
インターネットで読める全国の図書館
- 関連情報九州大学機能物質科学研究所報告 || 15(1) || p11-17 The reports of Institute of Advanced Material Study Kyushu University || 15(1) || p11-17 http://......ww.cm.kyushu-u.ac.jp/ http://13......JI/ http://www.asem.kyushu-u.ac.jp/
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