検索結果 380 件

デジタル記事
Akira Satou, Taiichi Otsuji, Victor Ryzhii<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070116-1~4
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  • 要約等...the population inversion in intrinsic graphene un......ation. We take into account the ......tion and recombination by the intra and interband optical......on (OP) scattering, and we assum......er (CC) scattering is dominant so that the......istribution. Using the model dev......the population inversion can be ......xcitation even in the limiting case of the dominant CC scattering. </jats:p>
  • 参照...hertz emission in optically pump......rtz population inversion and neg......c conductivity in graphene under......tz Radiation Using Two-Dimensional Electrons in III–V Semicond......-based devices in terahertz scie...... Effect of Heating and Cooling of Photogener......on–Hole Plasma in Optically Pump...... on Population Inversion Teraher......e generation using graphene &#x2......hertz graphene injection lasers The gain enhancement ef......lated emission in optically pump......e Generation Using Graphene: Tow......lated Emission in Optically Pumped Graphene
  • 参照...tric transport in graphene Ultra......f terahertz lasing in optically pump......uctures Ultrathin Epitaxial Grap......th optical pumping Measurement o......rrier dynamics in epitaxial grap......rrier Dynamics in Graphite Ultra......Dirac Fermions in Epitaxial Graphene Using Optical Diffe......raphene: Exploring carbon flatla...... Carrier recombination and gener......tion rates for intravalley and intervalley phonon scattering in graphene Population inversion of phot......rons and holes in graphene and i......res with slot-line and dielectri......Dirac fermions in graphene Zone-......oundary Phonon in Graphene and Nanotube
デジタル記事
Gennady N. Panin, Olesya O. Kapitanova, Sang Wuk Lee 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070110-1~6
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  • 要約等...esistive switching behaviors in an Al/graphene......substrate by spin-coating graphene oxid......ons and patterning Al electrodes......e-like (rectifying) and resistor......ike (nonrectifying) behaviors were observed in the device switching characteristi......graphene oxide interface using the induced current i......rrier near the interface and its......esistive switching of the whole ......esistive switching of the entire......phene clusters in an sp<jats:sup>3</jats:sup> insulating graphene oxid......e by a pre-forming process. </jats:p>
  • 参照Graphene-oxide-based resistive switching device for flexible nonvolat...
  • 参照Interpretation of......ent and conducting electrodes fo......volatile Switching in Graphene Field......ent and Conducting Chemically De......ved Graphene Thin Films Conducta......e-Controlled Point Functionalization of Single-Walled Carb...... Properties of Individual Chemic......esistive switching in transition met......oxides The missing memristor fou......harged defects in CdxHg1−xTe and...... electron beam induced current and scanning tunneling spectroscopy ......aphene Oxide Thin Films for Flex......ge-area ultrathin films of reduc...... material Who Wins the Nonvolati......esistive Switching Memories – Nanoionic Mechani...
記事
Maxim Ryzhii, Taiichi Otsuji, Vladimir Mitin<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070117-1~6
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  • 著者標目Maxim Ryzhii Taiichi Otsuji Vladimir Mitin
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
デジタル記事
Nobuyuki Sano<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.010108-1~6
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  • 参照Effect of dynamical Coulomb interaction on junctionless tran...
  • 参照MOSFET Performance Scaling—Part I: Histo......cal Trends Scaling MOSFETs to 10......onic Transport in nMOSFETs at th......ynamical Screening of Hot Carriers in Semiconductors......tron Transport in Si Including Full Coulomb Interaction Impac......of the Coulomb interaction on na......tics Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part I—Scattering in the Channel and in the Drain A novel approach for introducing the electron-......ctron-impurity interactions in particle-based simulations Kinetic study of v...... distributions in nanoscale semi......mentary scattering theory of the......tron transport in small semiconductor devices i...
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Akram M. Mahjoub, Shoutaro Motooka, Nobuyuki Aoki 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070119-1~4
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  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
デジタル記事
Ryo Nouchi, Katsumi Tanigaki<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070109-1~4
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  • 要約等...rge carrier doping from metallic......, one of the main features in the transfer c......comes more distinct with higher ......ity, higher doping level at the metal contacts,...
  • 参照Observation of negative contact resistances in graphene field-effect transis...
  • 参照TOWARDS BALLISTIC TRANSPORT IN GRAPHENE Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and......tential Scattering Spin Injection into a Graphene Thin Film at Room T......rge-density depinning at metal cont......le of contacts in graphene transistors: A scanning photocurrent ......haracteristics in graphene field......Co contacts Doping Graphene with......hole asymmetry in graphene Ultra......ctron mobility in suspended graphene The rise o...
デジタル記事
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi 他<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.010102-1~6
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  • 参照...dual order within thermally grow......thML" display="inline"><mml:mrow><m......ath>on crystalline silicon Therm......onductivity of individual silico...... quasiparticle in silicon observed in time–frequency......andscape of an interstitial<mml:......thML" display="inline"><mml:mrow><m......:math>molecule in a<mml:math xml......thML" display="inline"><mml:mrow><m......thML" display="inline"><mml:mrow><m......row></mml:math>interface Thermal Phenomena in Nanoscale Tran......h of electrons in metals <I>A Sp......mal conduction in doped single-crystal sil......rocess longitudinal optical phonons in silicon Nanoscale thermal tra...
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
デジタル記事
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070102-1~5
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  • 要約等<jats:p> With its industrial adapta......h-vacuum annealing of a SiC thin film on a sili......ate, is attracting recent attent......We demonstrate in this paper tha......l <jats:italic>in-situ</jats:italic> probe to investigate the s......e chemistry during formation of ......iC crystals. Using the D<jats:su......surface atoms, including their depende......0)] can be obtained. Difference in the growth mechanism of GOS a...
  • 参照Improvement in Film Quality o......nt Improvement in Film Quality o...... 3C-SiC(111) Thin Films on Micro......e on Silicon Using Surface Termination of 3C-SiC(111)/Si
  • 参照...d Raman-Scattering Spectroscopy ......rvation on the Interface Structu......probed by scanning-tunneling microscopy β-......1) surfaces during graphitization Interaction, growth, and ordering of epitaxial ......hene-SiC(0001) interface as a ke......en desorption kinetics investigated using temperature-p......nd Prospects C incorporation and......segregation during Si1−yCy/Si() ......-butene on platinum by temperatu......pendent carbon incorporation into the Si1−C film during gas-source mo......beam epitaxy using monomethylsil......f atomically thin graphite films......tion of ultrathin ion-beam depos...... C:H films Probing Phonon Dispersion Relations ...
記事
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070115-1~5
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  • 著者標目Hiroyuki Kageshima Hiroki Hibino Masao Nagase
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Muge Acik, Yves J. Chabal<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070101-1~16
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  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Dmitry Svintsov, Vladimir Vyurkov, Victor Ryzhii 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070112-1~6
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  • 著者標目Dmitry Svintsov Vladimir Vyurkov Victor R...
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070107-1~5
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  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Yuya Takatsuka, Eiichi Sano, Victor Ryzhii 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070118-1~4
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  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics
記事
Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue 他<Z53-A375>Japanese journal of applied physics : JJAP50(7) (1) 2011.7p.070120-1~4
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  • 著者標目Yasuhide Ohno Kenzo Maehashi Koichi Inoue
  • 出版者(掲載誌)Tokyo : The Japan Society of Applied Physics