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検索結果 194 件

Effects of thickness effect and rapid thermal annealing on ph sensing characteristics of thin HfO2 films formed by atomic layer deposition (Special issue: Dielectric thin films for future electron devices: science and technology)

Effects of thickness effect and rapid thermal annealing on ph sensing characteristics of thin HfO2 films formed by atomic layer deposition (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Tseng-Fu Lu, Hao-Chun Chuang, Jer-Chyi Wang 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PG03-1～4
国立国会図書館全国の図書館

Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)

Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Ching-Lin Fan, Yi-Yan Lin, Shou-Kuan Wang<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PC02-1～4
国立国会図書館全国の図書館

HfO2/Si and HfSiO/Si structures fabricated by oxidation of metal thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)

HfO2/Si and HfSiO/Si structures fabricated by oxidation of metal thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Yusuke Oniki, Yoshitaka Iwazaki, Masahiko Hasumi 他<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DA01-1～4
インターネットで読める国立国会図書館全国の図書館

Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2 (Special issue: Dielectric thin films for future electron devices: science and technology)

Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2 (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Sang-Uk Park, Hyuk-Min Kwon, In-Shik Han 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB06-1～4
国立国会図書館全国の図書館

Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and technology)

Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Miyuki Kouda, Kenji Ozawa, Kuniyuki Kakushima 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA06-1～4
国立国会図書館全国の図書館

HfOxNy thin-film formation on three-dimensional Si structure utilizing electron cyclotron resonance sputtering (Special issue: Dielectric thin films for future ULSI devices: science and technology)

HfOxNy thin-film formation on three-dimensional Si structure utilizing electron cyclotron resonance sputtering (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Takahiro Sano, Shun-ichiro Ohmi<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DB04-1～4
インターネットで読める国立国会図書館全国の図書館
  • 参照...fO<sub>2</sub> and HfON tunneling......utilizing ultrathin films with new mater......Gate Insulator and Its Effect on ......sub> Annealing and Its Effect on Ultrathin HfON Gate Insu......tics with ultrathin HfON gate insulator formed by...
  • 参照...s of amorphous and crystalline Ta2O5 thin films deposited on S......ion, Analysis, and Device Design ......G MOSFETs Ultrathin oxide films deposited usin......The Electrical and Material Characterization of ...

Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)

Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Xiang Li, Rihito Kuroda, Tomoyuki Suwa 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB05-1～7
国立国会図書館全国の図書館

Effective-mass anomalies of strained silicon thin films: surface and confinement effects (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Effective-mass anomalies of strained silicon thin films: surface and confinement effects (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Jun Yamauchi, Shunichi Matsuno<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3273～3276
インターネットで読める国立国会図書館全国の図書館
  • 参照...ons on Si, Ge, and GaAs Electroni......ns in strained and unstrained Si ......lue formalism Band structure and symmetry analy......tials Accurate and simple analyti...... properties of thin, channel regions from SOI thr...
  • 出版者（掲載誌）...titute of Pure and Applied Physics

Effect of composition in ternary La-Al-O films on flat-band voltage for application to dual high-k gate dielectric technology (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Effect of composition in ternary La-Al-O films on flat-band voltage for application to dual high-k gate dielectric technology (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Masamichi Suzuki, Masato Koyama, Atsuhiro Kinoshita<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DA03-1～4
インターネットで読める国立国会図書館全国の図書館

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Masayuki Saeki, Hiroaki Arimura, Naomu Kitano 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA01-1～4
国立国会図書館全国の図書館

Electron trap characteristics of silicon rich silicon nitride thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Electron trap characteristics of silicon rich silicon nitride thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Toshiyuki Mine, Koji Fujisaki, Takeshi Ishida 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3206～3210
インターネットで読める国立国会図書館全国の図書館
  • 参照...ilicon Nitride Films Thermal stabil......ilicon nitride films High resolutio......SiO<sub>2</sub>films with thermal t......ilicon nitride films
  • 参照...d temperatures and extraction of ......con oxynitride and Si-rich silicon nitride thin films Data retention......urface: Theory and experiment Ato......ilicon nitride and in situ growth......f Si-, O-, N-, and H-atoms at Si—SiO2 interfaces...
  • 出版者（掲載誌）...titute of Pure and Applied Physics

Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: science and technology)

Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
In-Shik Han, Hyuk-Min Kwon, Jung-Deuk Bok 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB03-1～4
国立国会図書館全国の図書館

Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)

Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Akio Ohta, Yuta Goto, Guobin Wei 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PH02-1～6
国立国会図書館全国の図書館

X-ray photoelectron spectroscopy study of interfacial reactions between metal and ultrathin Ge oxide (Special issue: Dielectric thin films for future electron devices: science and technology)

X-ray photoelectron spectroscopy study of interfacial reactions between metal and ultrathin Ge oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Akio Ohta, Tomohiro Fujioka, Hideki Murakami 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PE01-1～6
国立国会図書館全国の図書館

Impact of in situ postnitridation annealing for successful fabrication of HfSiON thin film (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Impact of in situ postnitridation annealing for successful fabrication of HfSiON thin film (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Sadayoshi Horii, Dai Ishikawa, Atsushi Sano 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3229～3233
インターネットで読める国立国会図書館全国の図書館
  • 出版者（掲載誌）...titute of Pure and Applied Physics

p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates (Special issue: Dielectric thin films for future electron devices: science and technology)

p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Min Hung Lee, Bin-Fong Hsieh, Tong-Han Wu 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PC01-1～3
国立国会図書館全国の図書館

Relationship between dipole moment of organic compound impurity in liquid crystal field and leakage current of liquid crystal cell (Special issue: Dielectric thin films for future electron devices: science and technology)

Relationship between dipole moment of organic compound impurity in liquid crystal field and leakage current of liquid crystal cell (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Ikue Kaneko, Kazuhiro Tachibana, Tatsuo Nishina 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PG06-1～4
国立国会図書館全国の図書館

Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)

Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Hyuk-Min Kwon, Jung-Deuk Bok, In-Shik Han 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB01-1～5
国立国会図書館全国の図書館

Electric dipole at high-k/SiO2 interface and physical origin by dielectric contact induced gap states (Special issue: Dielectric thin films for future electron devices: science and technology)

Electric dipole at high-k/SiO2 interface and physical origin by dielectric contact induced gap states (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Xiaolei Wang, Kai Han, Wenwu Wang 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PF02-1～4
国立国会図書館全国の図書館

Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technology)

Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Daisuke Kitayama, Toru Kubota, Tomotsune Koyanagi 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA05-1～5
国立国会図書館全国の図書館