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Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)

Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Ching-Lin Fan, Yi-Yan Lin, Shou-Kuan Wang<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PC02-1～4
国立国会図書館全国の図書館

Physics of magnetic thin films : theory and simulation

Physics of magnetic thin films : theory and simulation
紙図書
Hung T. DiepJenny Stanford Publishing[2021]<ND351-D26>
国立国会図書館全国の図書館
  • 内容細目...ave Theory for Thin Films. Frustrated Thin Films of Antiferroma......e. Heisenberg Thin Films with Frustrate......n Helimagnetic Thin Films. Helimagnetic Thin Films in a Field. S...... Skyrmions in Thin Films. Skyrmions in......uperlattices. Thin Films and Criticalit......Resistivity in Thin Films. Solutions of Exercises and ...
  • 件名Thin films--Magnetic properties Magnetic films Magnetic films. Thin films--Magnetic properties.

Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2 (Special issue: Dielectric thin films for future electron devices: science and technology)

Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2 (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Sang-Uk Park, Hyuk-Min Kwon, In-Shik Han 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB06-1～4
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HfO2/Si and HfSiO/Si structures fabricated by oxidation of metal thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)

HfO2/Si and HfSiO/Si structures fabricated by oxidation of metal thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Yusuke Oniki, Yoshitaka Iwazaki, Masahiko Hasumi 他<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DA01-1～4
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Electron trap characteristics of silicon rich silicon nitride thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Electron trap characteristics of silicon rich silicon nitride thin films (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Toshiyuki Mine, Koji Fujisaki, Takeshi Ishida 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3206～3210
インターネットで読める国立国会図書館全国の図書館
  • 参照...ilicon Nitride Films Thermal stabil......ilicon nitride films High resolutio......SiO<sub>2</sub>films with thermal t......ilicon nitride films
  • 参照...ilicon nitride thin films Data retention reliability mo...

Thermoelectric thin films : materials and devices

Thermoelectric thin films : materials and devices
紙図書
Paolo Mele, Dario Narducci, Michihiro Ohta, Kaniskha Biswas, Juan Morante, Shrikant Saini, Tamio Endo, editors.Springer[2019]<ND138-B17>
国立国会図書館
  • 要約等...thermoelectric thin films. It serves as ......thermoelectric thin film growth, c......thermoelectric thin films: oxides, chalc......thermoelectric thin films. Provides a si......thermoelectric thin films, from organic ......thermoelectric thin films based on diffe......thermoelectric thin films, as well as the nanoengineeri...
  • 内容細目Chapter1: Thin films of bismuth tel......rties of PEDOT films and their comp......-nitride-based thin films as novel therm......based on oxide thin films Chapter8: Ther......sheets and nanofilms grown by Chemi......lectric oxides thin films with hopping transport.
  • 件名Thin films. Thermoelectric materials.

HfOxNy thin-film formation on three-dimensional Si structure utilizing electron cyclotron resonance sputtering (Special issue: Dielectric thin films for future ULSI devices: science and technology)

HfOxNy thin-film formation on three-dimensional Si structure utilizing electron cyclotron resonance sputtering (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Takahiro Sano, Shun-ichiro Ohmi<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DB04-1～4
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  • 参照...utilizing ultrathin films with new mater......Effect on Ultrathin HfON Gate Insu......tics with ultrathin HfON gate insulator formed by...
  • 参照...stalline Ta2O5 thin films deposited on S......G MOSFETs Ultrathin oxide films deposited using electron cycl...

Effective-mass anomalies of strained silicon thin films: surface and confinement effects (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Effective-mass anomalies of strained silicon thin films: surface and confinement effects (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Jun Yamauchi, Shunichi Matsuno<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3273～3276
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  • 参照... properties of thin, channel regions from SOI thr...

Impact of in situ postnitridation annealing for successful fabrication of HfSiON thin film (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Impact of in situ postnitridation annealing for successful fabrication of HfSiON thin film (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Sadayoshi Horii, Dai Ishikawa, Atsushi Sano 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(5B) (通号 652) (Special Issue) 2007.5p.3229～3233
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Effects of thickness effect and rapid thermal annealing on ph sensing characteristics of thin HfO2 films formed by atomic layer deposition (Special issue: Dielectric thin films for future electron devices: science and technology)

Effects of thickness effect and rapid thermal annealing on ph sensing characteristics of thin HfO2 films formed by atomic layer deposition (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Tseng-Fu Lu, Hao-Chun Chuang, Jer-Chyi Wang 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PG03-1～4
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Chemically deposited nanocrystalline metal oxide thin films : synthesis, characterizations, and applications

Chemically deposited nanocrystalline metal oxide thin films : synthesis, characterizations, and applications
紙図書
Fabian I. Ezema, Chandrakant D. Lokhande, Rajan Jose, editorsSpringer[2021]<MC141-D14>
国立国会図書館
  • 要約等...n the areas of thin film preparation, characteriz...
  • 内容細目...ed Metal Oxide Thin Films Structural and......ed metal oxide thin films for Dye-Sensit......ed Metal Oxide Thin Films for Enhanced Solar Energy App...
  • 件名Thin films Metallic oxide......red materials. Thin films.

Handbook of thin film deposition Fourth edition.

Handbook of thin film deposition Fourth edition.
紙図書
edited by Krishna Seshan, Dominic Schepis.William Andrew, and imprint of Elsevier[2018]<ND371-B116>
国立国会図書館全国の図書館
  • 要約等Handbook of thin film depositio......ce focusing on thin film technolog......lated areas of thin film deposition, thin film micro pro......nd methods for thin film optical p...... the limits of thin film applicati......ical survey of thin film technolog......developments within the photovoltaic and optical thin film industries.
  • 内容細目...is Section II. Thin film depositio......mon Chapter 8. Thin film depositio......er 12. Optical thin films / Angus Macleo......Application of thin films in semiconductor memories / S...
  • 件名Thin films--Handbooks, manuals, etc. Thin film devices--Design and cons...

Effect of Silicon Addition on Electrical Properties of SrBi2Ta2O9 Thin Films (Special Issue: Dielectric Thin Films for Future ULSI Devices)

Effect of Silicon Addition on Electrical Properties of SrBi2Ta2O9 Thin Films (Special Issue: Dielectric Thin Films for Future ULSI Devices)
デジタル記事
Susumu Tamura, Yasuhisa Omura, Sumio Nakahara<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP43(11B) (通号 604) (Special Issu) 2004.11p.7871～7875
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  • 要約等...>7</SUB> (SBT) thin films were fabricate......ted on the SBT thin film by DC mag......ant of the SBT thin film decreased......eased. The SBT thin film had a ran......ern of the SBT thin film changed n......icon-added SBT thin film showed a ......icon-added SBT thin film is suitable for applicat...
  • 件名SrBi2Ta2O9 thin film silicon addition ferroel...
  • 参照Dielectric Property of Silicate-Doped CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>Thin Films

Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)

Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Xiang Li, Rihito Kuroda, Tomoyuki Suwa 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB05-1～7
国立国会図書館全国の図書館

Thin film structures in energy applications

Thin film structures in energy applications
紙図書
Suresh Babu Krishna Moorthy, editor.Springer[2015]<ND371-B94>
国立国会図書館
  • 要約等...ve overview of thin film structure......iples for each thin film structure...... authors cover thin films for a variety of energy secto...
  • 内容細目Thin film? depositi......ting compounds thin film solar cel......ate-of-the-art thin film electroly......ide fuel cells Thin film thermoele......troluminescent Thin Film Phosphors Thin Films for Energy Efficient Mechanic...
  • 件名Thin films. Thin films--Electric properties. Thin-film circuits. TECHNOLOGY & E...

Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and technology)

Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Miyuki Kouda, Kenji Ozawa, Kuniyuki Kakushima 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA06-1～4
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Oxide thin films, multilayers, and nanocomposites

Oxide thin films, multilayers, and nanocomposites
紙図書
Paolo Mele, Tamio Endo, Shunichi Arisawa, Chaoyang Li, Tetsuo Tsuchiya, editors.Springer[2015]<M213-B230>
国立国会図書館全国の図書館
  • 要約等...lved in oxides thin film and bulk ......and experts in thin film heteroepi......ns described within this book.
  • 内容細目...uperconducting Films Prepared by Me...... HTS epitaxial thin films High Tc superc......s whiskers and thin films Nanocomposite ......Nanostructured thin films of thermoelect......s Superlattice thin films with metal oxi......d cerium oxide films: synthesis, pr......ication of ZnO thin film and nanostructures for o...
  • 件名...rface Science, Thin Films.

Development of New Thin Film Multilayered Systems for Recordable Optical Disc Memory Compatible with CD and DVD (Special Issue: New Thin Film Multilayered Systems for Recordable Optical Disc Memory Compatible with CD and DVD)

Development of New Thin Film Multilayered Systems for Recordable Optical Disc Memory Compatible with CD and DVD (Special Issue: New Thin Film Multilayered Systems for Recordable Optical Disc Memory Compatible with CD and DVD)
デジタル記事
元廣 友美<Z16-948>豊田中央研究所R&Dレビュー = R&D review of Toyota CRDL / R&Dレビュー編集委員会 編38(3) 2003.9p.1～7
国立国会図書館全国の図書館

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Masayuki Saeki, Hiroaki Arimura, Naomu Kitano 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA01-1～4
国立国会図書館全国の図書館

Study of high-κ/In0.53Ga0.47As interface by hard X-ray photoemission spectroscopy (Special issue: Dielectric thin films for future electron devices: science and technology)

Study of high-κ/In0.53Ga0.47As interface by hard X-ray photoemission spectroscopy (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Koji Yamashita, Yuuya Numajiri, Masato Watanabe 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PD02-1～5
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