検索結果 12 件

デジタル記事
1989-01-01Journal of Applied Physics65 1p.98-104
全国の図書館
  • 要約等...virgin silicon and in silicon con......ocation loops. The loops were for......+ implantation and 900 °C, 30 min......ay diffraction and junction depth...... were used for the analysis of implant defects and the determination ...... in furnace in the range between 600 and 900 °C, and by electron be......0 °C for 10 s. The results obtained show that the presence of lo......rongly reduces the phosphorus ano...... phenomenon is the consequence of the absorption by the loops of the interstitial e......dissolution of the clusters produced by the P implant. The influence of the loop position ......ith respect to the P distribution on the extent ...
  • 件名General Physics and Astronomy
  • 参照...on of Boron in the Presence of Dislocations Produced by Amorphizing Impla...
デジタル記事
1970-07Journal of Nuclear Materials36 1p.120-
全国の図書館
  • 件名Nuclear Energy and Engineering General Materials Science Nuclear and High Energy Physics
デジタル記事
槙井, 浩一, 堤, 哲男, 青野, 泰久, 蔵元, 英一九州大学応用力学研究所1987-12應用力學研究所所報65p.383-408
インターネットで読める全国の図書館
  • 並列タイトル等(連結)...on Softening : The Computer Simulation of the Interaction Between a Dislocation and a Point Defect
  • 並列タイトル等...on Softening : The Computer Simulation of the Interaction Between a Dislocation and a Point Defect
デジタル記事
1975-05-05Physical Review Letters34 18p.1174-1177
全国の図書館
  • 件名General Physics and Astronomy
  • 参照Interaction Potential between a Dislocation and a Pinning Atom......termination of the Force-Distance Relation for the Interaction between a Dislocation and a Solute Atom
デジタル記事
1972-11-16Physica Status Solidi (a)14 1p.347-354
全国の図書館
  • 件名Condensed Matter Physics Electronic, Optical and Magnetic Materials
  • 参照Interaction Potential between a Dislocation and a Pinning Atom in FCC Metals

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