検索結果 12 件
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- 参照Fabrication and characteristic......ases Nature of the Internal Friction Peak in Col...
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- 要約等...virgin silicon and in silicon con......ocation loops. The loops were for......+ implantation and 900 °C, 30 min......ay diffraction and junction depth...... were used for the analysis of implant defects and the determination ...... in furnace in the range between 600 and 900 °C, and by electron be......0 °C for 10 s. The results obtained show that the presence of lo......rongly reduces the phosphorus ano...... phenomenon is the consequence of the absorption by the loops of the interstitial e......dissolution of the clusters produced by the P implant. The influence of the loop position ......ith respect to the P distribution on the extent ...
- 件名General Physics and Astronomy
- 参照...on of Boron in the Presence of Dislocations Produced by Amorphizing Impla...
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- 件名Nuclear Energy and Engineering General Materials Science Nuclear and High Energy Physics
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- 並列タイトル等(連結)...on Softening : The Computer Simulation of the Interaction Between a Dislocation and a Point Defect
- 並列タイトル等...on Softening : The Computer Simulation of the Interaction Between a Dislocation and a Point Defect
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- 件名General Physics and Astronomy
- 参照Interaction Potential between a Dislocation and a Pinning Atom......termination of the Force-Distance Relation for the Interaction between a Dislocation and a Solute Atom
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- 件名Condensed Matter Physics Electronic, Optical and Magnetic Materials
- 参照Interaction Potential between a Dislocation and a Pinning Atom in FCC Metals
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- 参照The Role of Dislocation as Sinks ...
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