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- 参照High temperature annealing of ion irradiated......croscopy study of growth of dislocation lo......atial ordering of nano-dislocati......amic behaviour of nanometre-size......n-situ WB-STEM observation of dislocation lo......ling Detection of one-dimensional migration of single self-in...... and transport of heavy defects ......l Glide Motion of “Naked” Nanoscale 1/2^|^lt;11...
- 参照...wnian dynamics of interacting na...... configuration of high-mobility ......n irradiations of Fe and Fe–Cr m......t higher doses Thermal mobility of interstitial d......in Cu and α-Fe Observation of the One-Dimensional Diffusion of Nanometer-Size......ular continuum theory of dislocations Mechanism of Formation and Growth of<mml:math xmlns......Dimensionality of interstitial c......s in modelling the microstructura...... conditions On the formation of interstitial l......metals Effects of glissile inter......ials Formation of stable sessile......r Crowdions in the bcc Transition Metals The displacement, ......–stress fields of a general circular Volterra d...
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- 参照...tropic effects of radiation-indu...... Investigation of anisotropic ha......ion dependence of irradiation-induced hardening...
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- 要約等<jats:p>Here we present the first direct observation of the atomic structure of threading disl......trast imaging, dislocations with edge char......old ring core. The central column in the core of a pure edge dislocation has the same configura......ion as one row of dimers on the {10-10} surfac......llowing recent theoretical work, ......osed that edge dislocations do not have de......fect states in the band gap, and ......n contrast. On the other hand, both mi......and pure screw dislocations are found to h......have states in the gap.</jats:p>
- 参照...tion behaviors of threading dislocations in freestandin......itaxial Growth of AlGaN/GaN High...... Associated to the Threading Disl......nd [0001] Line Direction in GaN Anti......ystal Hardness of Bulk Single-Crystal Gallium N...
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- 要約等...d in observing directly the interaction be......ex lattice and dislocations in a Nb film, ......arly pinned by dislocations and a vortex l...... formed around the pinned sites. ...... extension and the density of the vortices increase with the increase of magnetic-field......ength to form “the Abrikosov latt......t but consists of “domains” with......dered areas at their boundaries. When the specimen tempe......s raised above the critical tempe......, with keeping the magnetic field at 200 G, the vortex lattice......appeared. When the temperature wa......d orientation. The reorientation suggests that the interaction between vortices ...
- 参照In situ Lorentz microscopy observation of displaced chain walls in perm...
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- 要約等<jats:p>The electronic structure of pure edge threading dislocations in metalorgani......s been studied directly by atomic re......o evidence for the high concentration of Ga vacancies p......ed by previous theoretical calcul......nt increase in the intensity of the first fine-str......ediately above the edge onset compared to the bulk spectra. The origin of this increase is discussed.</...
- 参照Atomic resolution analysis of extended defec......lanted GaN and their impacts on acceptor formati...
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- 件名Dislocations in crystals. Fisica Do Estado...
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- 要約等<jats:p>The edge-like dislocations in a KCl singl......r a wavelength of 514 nm) and a ......al microscope. The image of glide dislocations was very sharp......ared with that of grown-in dislocations. The orientation dependence of light scatteri......Moriya–Ogawa’s theory [Philos. Mag. A 41, 191 (1...
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- 要約等<jats:p>Regions of low dislocatio......copy. Discrete dislocations were located a...... identified by their etching behavior in the calibrated A/B......nt. Comparison of identical regi......μm occurred at the sites of each dislocation. The results demonstrate directly that enhancement of [EL2], the concentration of the deep donor lev......curs at single dislocations.</jats:p>
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- 参照Effect of hydrogen on evolution of deformation mi......Susceptibility of Fe-Mn Binary A......ntent: Effects of Stable and Met......on Multi-scale observation of hydrogen-induc......xplanation for the contradictory results of hydrogen effec......ion Transition of creep mechanis......rowth behavior of a 1900-MPa-cla......ics simulation of Surface-Adsorb......Situ TEM Study of Hydrogen-Induc......Implementation of an Elastoplast......ve Equation in the Presence of Hydrogen 軟鋼－アル......on Measurement of Localized Defo......arbon Steel in the Presence of Hydrogen Hydrogen Effect on the Mobility of Edge Dislocati......sion Mechanism of Strain-age-hardening in Carbo...
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- 要約等<jats:p>The dependence of the critical layer......ole fraction x of Si1−xGex/Si he...... determined by direct observations of misfit dislocations by using the electron beam ......roscopy (TEM). The EBIC images of the Si1−xGex/Si in......rns running in the 〈110〉 directions. These patterns are......ntified by TEM observation to be misfit dislocations generated at the Si1−xGex/Si interface. The dependence of hc on x is compared with the results report......, 229 (1986)]. The comparison rev......exists between them, especially in the range of x<0.3. This in...... to arise from the difference in the techniques adopted to determi...
- 参照Critical Thickness for the Si<sub>1-x</su......ure Generation of Misfit Dislocations in Si<sub>1-x<......terostructures Thermal Stability of B-Doped SiGe L......itaxy Behavior of Misfit Dislocations in GaAs Epilay......r Beam Epitaxy of Silicon-Based ......ical thickness of strained Si on SiGe bulk virt...
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- 要約等...ethods capable of high spatial r......e structure in the well known ‘‘M...... distributions of dislocation de......110〉 diameters of {001} wafers o......een confirmed. The implications b......growth and for the electrical properties of the semi-insulating material are ...
- 参照...fers Influence of Annealing Meth......eshold Voltage of GaAs MESFET an......cation Mapping of EL2-Related Luminescence on S...
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- 要約等Motion of dislocations in Ni and Ni-5......le crystals by the application of alternating ma......observed using the etch-pitting t......onal distances of motion of dislocations caused by the fields after the application of an external st......ed randomly in the range between ......about 80 μm at the yield point of each crystal, and their distances ar......st independent of the field frequenc......e discussed on the basis of the interaction be......een individual dislocations and oscillating domain walls ...