ヘルプ
ヘルプ

検索結果 106,730 件

Reactive and functional polymers. Volume one Biopolymers, polyesters, polyurethanes, resins and silicones

Reactive and functional polymers. Volume one Biopolymers, polyesters, polyurethanes, resins and silicones
紙図書
Tomy J. Gutiérrez, editorSpringer[2020]<PA431-D46>
国立国会図書館全国の図書館
  • 要約等...ive resins and silicones. In this book, world-renown...
  • 内容細目...amura Reactive Silicones as Multiface......and Functional Silicones for Special ...... Maxillofacial Silicone Elastomers in......l and Reactive Silicone Polymers / Kaleigh M. Ryan, ...
  • 並列タイトル等（連結）Biopolymers, polyesters, polyurethanes, resins and silicones

High integrity gate insulator films on atomically flat silicon surface (Silicon devices and materials)

High integrity gate insulator films on atomically flat silicon surface (Silicon devices and materials)
紙記事
X. Li, R. Kuroda, T. Suwa 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報110(110) 2010.6-7.30-2p.183～188
国立国会図書館
  • 件名silicon surface atomically flattening...

特許出願技術動向調査分析報告書 平成14年度 [1] (SOI(Silicon on insulator)技術)

特許出願技術動向調査分析報告書 平成14年度 [1] (SOI(Silicon on insulator)技術)
紙図書
特許庁2003.3<M351-H43>
国立国会図書館全国の図書館
  • 内容細目ＳＯＩ（Ｓｉｌｉｃｏｎ　ｏｎ　ｉｎｓｕｌａｔｏｒ）技術
  • 典拠情報（件名/「を見よ」参照）特許--半導体 Silicon
  • 並列タイトル等（連結）SOI(Silicon on insulator)技術

InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD (Silicon devices and materials)

InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD (Silicon devices and materials)
紙記事
Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報110(110) 2010.6-7.30-2p.241～244
国立国会図書館
  • 件名InAlN/GaN HEMT MOCVD 4-in silicon

Silicon anode systems for lithium-ion batteries

Silicon anode systems for lithium-ion batteries
紙図書
edited by Prashant N. Kumta, Aloysius F. Hepp, Moni K. Datta, Oleg I. VelikokhatnyiElsevier[2022]<PA185-D28>
国立国会図書館
  • 内容細目Silicon anode systems ......nt advances in silicon materials for ......performance of silicon nanosheets as ...... properties of silicon-based electrod......rned amorphous silicon thin film Li-i......on modeling in silicon anodes / Parth......chitectures of silicon for high-perfo...... properties of silicon anode material......Singh Advanced silicon-based electrodes for high-ene...
  • 件名Anodes Silicon--Electric prop......́riaux Anodes. Silicon--Electric properties.

Fabrication of double-dot single-electron transistor in silicon nanowire (Silicon devices and materials)

Fabrication of double-dot single-electron transistor in silicon nanowire (Silicon devices and materials)
紙記事
Mingyu Jo, Takuya Kaizawa, Masashi Arita 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報109(98) 2009.6.24-26p.189～192
国立国会図書館
  • 件名single electron Coulomb blockade double dot silicon SOI

Novel-functional single-electron devices using silicon nanodot array (Silicon devices and materials)

Novel-functional single-electron devices using silicon nanodot array (Silicon devices and materials)
紙記事
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報109(98) 2009.6.24-26p.145～148
国立国会図書館

Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces (Silicon devices and materials)

Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces (Silicon devices and materials)
紙記事
J. H. Ahn, J. H. Lee, T. W. Koo 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報109(98) 2009.6.24-26p.137～140
国立国会図書館
  • 件名silicon nanowire VLS bottom-up synthe...

Monte Carlo study of the coulomb interaction in nanoscale silicon devices (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Monte Carlo study of the coulomb interaction in nanoscale silicon devices (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)
紙デジタル記事
Nobuyuki Sano<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.010108-1～6
国立国会図書館全国の図書館
  • 参照... on nano-scale silicon device characteristics Unders...

Effects of field plate and buried gate structures on silicon carbide metal-semiconductor field-effect transistors (Silicon devices and materials)

Effects of field plate and buried gate structures on silicon carbide metal-semiconductor field-effect transistors (Silicon devices and materials)
紙記事
Jae-Gil Lee, Chun-Hyung Cho, Ho-Young Cha<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報110(110) 2010.6-7.30-2p.237～240
国立国会図書館全国の図書館
  • 件名Buried gate Field plate MESFET Silicon carbide

Strain effects in resistor stress sensor fabricated on (001) silicon and their influence the determination of piezoresistive coefficients (Silicon devices and materials)

Strain effects in resistor stress sensor fabricated on (001) silicon and their influence the determination of piezoresistive coefficients (Silicon devices and materials)
紙記事
Chun-Hyung Cho, Ho-Young Cha<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報110(110) 2010.6-7.30-2p.155～160
国立国会図書館全国の図書館
  • 件名Stress sensor Strain effects (001) silicon Piezoresisitive coefficients

Fabrication of silicon nanowire devices using AC dielectrophoresis (Silicon devices and materials)

Fabrication of silicon nanowire devices using AC dielectrophoresis (Silicon devices and materials)
紙記事
Su-Heon Hong, Myung-Gil Kang, Dong-Mok Whang 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報108(122) 2008.7.9-11p.145～148
国立国会図書館
  • 件名silicon nanowire dielectrophoresis

Electrical detection of silicon binding protein-protein A using a p-MOSFET sensor (Silicon devices and materials)

Electrical detection of silicon binding protein-protein A using a p-MOSFET sensor (Silicon devices and materials)
紙記事
H. Murakami, S. Mahboob, K. Katayama 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報109(98) 2009.6.24-26p.161～164
国立国会図書館全国の図書館

Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages (Silicon devices and materials)

Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages (Silicon devices and materials)
紙記事
C.-H. Cho, H.-Y. Cha<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報109(98) 2009.6.24-26p.165～168
国立国会図書館
  • 件名VDP van der Pauw strain effects (111) silicon stress sensors piezo-resistiv...

Invited: Quantum modeling of carrier transport through silicon nano-devices (Silicon devices and materials)

Invited: Quantum modeling of carrier transport through silicon nano-devices (Silicon devices and materials)
紙記事
Nobuya Mori, Hideki Minari<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報108(122) 2008.7.9-11p.31～36
国立国会図書館

Silicon containing hybrid copolymers

Silicon containing hybrid copolymers
紙図書
edited by Chaobin He and Zibiao Li.Wiley-VCH[2020]<PA431-D21>
国立国会図書館
  • 内容細目...ction of Organosilicon Materials / Hu......ssemblies from Silicon-containing Hyb......ed from Hybrid Silicon Copolymers / L...... He, Zibiao Li Silicone Copolymers fo......He 3D Printing Silicone Materials and Devices / Jayv...
  • 件名Silicon polymers. Copolymers.

The new entrepreneurial advocacy : Silicon Valley elites in American politics

The new entrepreneurial advocacy : Silicon Valley elites in American politics
紙図書
Darren R. Halpin and Anthony J. NownesOxford University Press[2021]<DC536-D6>
国立国会図書館全国の図書館
  • 要約等...rs and CEOs of Silicon Valley firms. ......on lobbying of Silicon Valley firms, ...... commentary of Silicon Valley CEOs and founders, and...
  • 内容細目...rican politics Silicon Valley firms i......rican politics Silicon Valley leaders in federal ele...

Evaluation of strained-silicon by electron backscattering pattern measurement: comparison study with UV-Raman measurement and edge force model calculation (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Evaluation of strained-silicon by electron backscattering pattern measurement: comparison study with UV-Raman measurement and edge force model calculation (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)
紙デジタル記事
Motohiro Tomita, Daisuke Kosemura, Munehisa Takei 他<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.010111-1～8
国立国会図書館全国の図書館
  • 参照...easurements in silicon–germanium allo......germanium-rich silicon–germanium films Determination...
  • 参照...termination in silicon microstructure......train field in silicon on insulator l......ed problems in silicon technology Cha......ical stress in silicon integrated cir......easurements in silicon devices through Raman spectro...

The data analysis technique of the atomic force microscopy for the atomically flat silicon surface (Silicon devices and materials)

The data analysis technique of the atomic force microscopy for the atomically flat silicon surface (Silicon devices and materials)
紙記事
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報108(122) 2008.7.9-11p.265～269
国立国会図書館全国の図書館
  • 件名atomically flat (100) silicon wafer off direction angle off...

Molecular dynamics simulation on longitudinal optical phonon mode decay and heat transport in a silicon nano-structure covered with oxide films (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Molecular dynamics simulation on longitudinal optical phonon mode decay and heat transport in a silicon nano-structure covered with oxide films (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)
紙デジタル記事
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi 他<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.010102-1～6
国立国会図書館全国の図書館
  • 参照...onductivity of silicon nanostructures......on crystalline silicon Thermal conduc...... of individual silicon nanowires The ......asiparticle in silicon observed in ti......single-crystal silicon films Anharmon......cal phonons in silicon Nanoscale ther......nsed phases of silicon Study of self-......g oxidation of silicon nanoclusters b......Single-Crystal Silicon Layers in SOI ......at hotspots in silicon Novel Interatomic Potential E...