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Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)

Improvement in characteristics of low-temperature polycrystalline silicon thin film transistors with high-efficiency and low-damage N2 plasma pretreatment (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Ching-Lin Fan, Yi-Yan Lin, Shou-Kuan Wang<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PC02-1～4
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Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing
デジタル記事
Masafumi Kunii<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(2A) (通号 626) 2006.2p.660～665
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  • 件名polycrystalline silicon thin film transistor high pressure...
  • 参照Hot-carrier immunity of polycrystalline silicon thin film transistors using silico...
  • 参照... dependence in polycrystalline silicon Polycrystalline Silicon for In...... properties of polycrystalline silicon films Sequential Lat......Processing for Polycrystalline Si TFTs Determ......ate density in polycrystalline silicon by fie......ary defects in polycrystalline silicon Format......ion of silicon films Conductivity behavior in polycrystalline semiconductor thin film transisto...... properties of polycrystalline silicon films Hydrogen passi......ture-Processed Polycrystalline Si Thin-Film Transisto...... of Defects in Polycrystalline Silicon Thin Films Using Raman Sc...... Amorphous and Polycrystalline Silicon Thin Films with H<...

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Masayuki Saeki, Hiroaki Arimura, Naomu Kitano 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PA01-1～4
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Synthesis and Electrical Properties of Sr- and Nb-Cosubstituted Bi4-xSrxTi3-xNbxO12 Polycrystalline Thin Films

Synthesis and Electrical Properties of Sr- and Nb-Cosubstituted Bi4-xSrxTi3-xNbxO12 Polycrystalline Thin Films
紙デジタル記事
Hirofumi Matsuda, Takashi Iijima, Hiroshi Uchida 他<Z54-J337>Japanese journal of applied physics. Part 2, Letters & express letters42(8A) (通号 394) 2003.8.1p.L949～952
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  • 要約等...12</SUB> (BIT) thin films were modified ....... Single-phase thin films with a BIT-typ...... at 650°C. The films with <I>x</I>=1.0 and 1.5 did...

Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)

Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
紙記事
Takeo Matsuki, Ranga Hettiarachchi, Wei Feng 他<Z53-A375>Japanese journal of applied physics : JJAP50(10) (2) 2011.10p.10PB02-1～5
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Comments on Surface Studies and Surface Alteration of CuInSe2 Polycrystalline Thin Films (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)

Comments on Surface Studies and Surface Alteration of CuInSe2 Polycrystalline Thin Films (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
デジタル記事
Yu-Han Cheng, Yun-Liang Soo, Shiwen Huang 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP39(-) (通号 -) (Suppl.1) 2000p.379～381
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翻訳論文 ガラス基板上に形成された自己整合四端子平面型埋込式メタルダブルゲート低温多結晶シリコン薄膜トランジスタの制御性

翻訳論文 ガラス基板上に形成された自己整合四端子平面型埋込式メタルダブルゲート低温多結晶シリコン薄膜トランジスタの制御性
紙記事
大澤 弘樹, 佐々木 駿, 原 明人<Z14-10>東北学院大学工学部研究報告 = Science and engineering reports of Tohoku Gakuin University, Japan51(1):2017.2p.25-32
国立国会図書館全国の図書館
  • 並列タイトル等（連結）...ow-temperature polycrystalline-silicon thin-film transistor on a glass su...
  • 並列タイトル等...ow-temperature polycrystalline-silicon thin-film transistor on a glass su...

Effect of impurities on the grain growth of polycrystalline Cu thin film

Effect of impurities on the grain growth of polycrystalline Cu thin film
紙デジタル記事
篠嶋 妥, 永井 傑朗, 大貫 仁<Z17-14>電気化学および工業物理化学 = Denki kagaku79(11) 2011.11p.869～875
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  • 要約等We simulated grain growth of polycrystalline Cu thin film with impurities by the m...
  • 件名Grain Growth Cu Thin Films Impurity Molecular Dynamics M...
  • 参照...rfaces between thin films Formation of Ions in Glow Dis...

Fabrication of Planar-aligned Polycrystalline Thin Films by Liquid Crystals

Fabrication of Planar-aligned Polycrystalline Thin Films by Liquid Crystals
紙記事
Wang, Yi-Fei, 飯野, 裕明, Iino, Hiroaki, 半那, 純一, Hanna, Jun-ichi2015-11
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  • 並列タイトル等（連結）Fabrication of Planar-aligned Polycrystalline Thin Films by Liquid Crystals
  • 並列タイトル等Fabrication of Planar-aligned Polycrystalline Thin Films by Liquid Crystals

Pinch-off voltage lowering in polycrystalline silicon thin-film transistors

Pinch-off voltage lowering in polycrystalline silicon thin-film transistors
紙デジタル記事
Hiroyuki Ikeda, Nobuyuki Sano<Z53-A375>Japanese journal of applied physics : JJAP50(1) (1) 2011.1p.014301-1～8
国立国会図書館全国の図書館
  • 参照...trap states in polycrystalline–silicon thin-film transisto......e measurements Thin film transisto......acteristics in polycrystalline silicon thin-film transisto...... properties of polycrystalline silicon films XeCl Excimer l......nd Polysilicon Thin Film Transisto......rphous silicon thin-film transisto...... Dependence of polycrystalline silicon thin-film transisto......ty behavior in polycrystalline semiconductor thin film transisto......n Source-gated thin-film transisto......in polysilicon thin-film transisto......in Polysilicon Thin-Film Transisto......acteristics in Polycrystalline-Silicon Thin-Film Transistors...

Advances in silicon solar cells

Advances in silicon solar cells
紙図書
Shadia Ikhmayies, editor.Springer International Publishing AG[2018]<ND416-B106>
国立国会図書館
  • 要約等...i solar cells, polycrystalline and amorphous thin-film silicon solar cells, and...
  • 内容細目...on solar cells Polycrystalline (p-Si) silicon thin film solar cel......silicon (a-Si) thin film solar cells Third genera...

Novel multiple-channel polycrystalline silicon thin-film transistors employing asymmetric spacing (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Novel multiple-channel polycrystalline silicon thin-film transistors employing asymmetric spacing (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
紙記事
Sung-Hwan Choi, Min-Koo Han<Z53-A375>Japanese journal of applied physics : JJAP50(3) (2) 2011.3p.03CB02-1～5
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Flexibility of low temperature polycrystalline silicon thin-film transistor on tungsten foil (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Flexibility of low temperature polycrystalline silicon thin-film transistor on tungsten foil (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
紙記事
Won Gyu Lee, Tae Hoon Lim, Jin Jang<Z53-A375>Japanese journal of applied physics : JJAP50(3) (2) 2011.3p.03CB03-1～5
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Photo-induced hydrophilicity of polycrystalline SrTiO3 thin films

Photo-induced hydrophilicity of polycrystalline SrTiO3 thin films
紙デジタル記事
Ken-ichi Katsumata, Tetsuya Shichi, Akira Fujishima<Z78-A504>Journal of the Ceramic Society of Japan = 日本セラミックス協会学術論文誌118(1373) 2010.1p.43～47
国立国会図書館全国の図書館
  • 要約等...iO<sub>3</sub> thin films prepared by th......iO<sub>3</sub> thin films were prepared ......omposed on the films was almost the....... Although the films did not show h......radiation. The films with smaller g......iO<sub>3</sub> films exhibited the photo-induced h...
  • 参照...bO<sub>3</sub> Thin Films Studies of Sur......multiple layer thin film prepared ......iO<sub>2</sub> Thin Films by Introducing......parent anatase thin films Optical Proper......kite Structure Thin Films of Single-Crys......iO<sub>3</sub> Films:  Photocatalyt......cteria on TiO2 thin film Bacterici......iO<sub>2</sub> Thin Film under Wea......iO<sub>2</sub> Thin Film Surfaces ......iO<sub>2</sub> Thin Films

Defect reduction in polycrystalline silicon thin films at 150℃ (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Defect reduction in polycrystalline silicon thin films at 150℃ (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
デジタル記事
Toshiyuki Sameshima, Yuta Mizutani, Katsuyuki Motai 他<Z53-A375>Japanese journal of applied physics : JJAP49(3) (2) 2010.3p.03CA02-1～4
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Franz dispersion relation for tunneling simulations in polycrystalline silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si structures (Special issue: Dielectric thin films for future ULSI devices: science and technology)

Franz dispersion relation for tunneling simulations in polycrystalline silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si structures (Special issue: Dielectric thin films for future ULSI devices: science and technology)
デジタル記事
Mikhail I. Vexler, Angelika Kuligk, Bernd Meinerzhagen<Z53-A375>Japanese journal of applied physics : JJAP48(5) (2) 2009.5p.05DE01-1～5
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  • 参照...ed carriers in thin insulators Cha......t through ultrathin gate oxides De......eters in ultra-thin oxide layer poly-Si/SiO2/Si s...

Thin film solar cells prepared on low thermal budget polycrystalline silicon seed layers

Thin film solar cells prepared on low thermal budget polycrystalline silicon seed layers
デジタル記事
Christian Jaeger, Takuya Matsui, Masayoshi Takeuchi 他<Z53-A375>Japanese journal of applied physics : JJAP49(11) 2010.11p.112301-1～4
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  • 参照...rge-Grained Si Films on Insulators ......cterization of polycrystalline Ge thin films on insulators ......r-exchanged Ge thin films on glass substrates by select...
  • 参照Thin-film solar cel......i islands from polycrystalline silicon seed l......nge Method for Thin Film Polycrystalline Silicon Solar ......ing Substrates Polycrystalline silicon films by aluminium-i......e formation of polycrystalline silicon by alu...... Large-grained polycrystalline silicon on glass for thin-film solar cel......ith VHF plasma Polycrystalline silicon thin-film solar cel...... large-grained polycrystalline seed layers by......por deposition Polycrystalline Si films formed by Al-i......ghly efficient thin-film polycrystalline-silicon solar ......ng process for polycrystalline silicon thin-film solar cells on glass Inf...

Enhancement of current drivability of nanograting polycrystalline silicon thin-film transistor (Special issue: Solid state devices and materials)

Enhancement of current drivability of nanograting polycrystalline silicon thin-film transistor (Special issue: Solid state devices and materials)
紙記事
Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DJ11-1～5
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Investigations of an independent double-gated polycrystalline silicon nanowire thin film transistor for nonvolatile memory operations

Investigations of an independent double-gated polycrystalline silicon nanowire thin film transistor for nonvolatile memory operations
紙デジタル記事
Wei-Chen Chen, Horng-Chih Lin, Tiao-Yuan Huang<Z53-A375>Japanese journal of applied physics : JJAP50(8) (1) 2011.8p.085002-1～7
国立国会図書館全国の図書館
  • 参照Novel gate-all-around polycrystalline silicon nanowire memory devic...
  • 参照...nfiguration on polycrystalline-Si nonvolatile......ow-Temperature Polycrystalline Silicon Thin-Film Transist ......0-nm Dual-Gate Thin-Film Transistors for Monolith...

Color sensitivity of thin-film phototransistor using polycrystalline-silicon film with p/i/n structure (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Color sensitivity of thin-film phototransistor using polycrystalline-silicon film with p/i/n structure (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
デジタル記事
Yuta Miura, Takeshi Ogura, Tomohisa Hachida 他<Z53-A375>Japanese journal of applied physics : JJAP49(3) (2) 2010.3p.03CA01-1～4
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