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図書
Yutaka Yoshida, Guido Langouche editorsSpringerc2015<PA431-B169>
国立国会図書館
  • 内容細目Diffusion and point defects in silicon materi......unctional modeling of defects and impurities in silicon materials José Coutinho 著 Electrical......h 著 Control of intrinsic point defects in single-crystal Si ......islocations during silicon cryst......r solar cells Bing Gao, Koichi K...... precipitation in silicon Gudrun Kissinger 著 Defect characterization in silicon by electron-beam-induced current and cathodoluminescence techniq......thods to study defects and impurities in Si materials G......da 著 Defect engineering in silicon materials Werner Berg...
図書
Hiroyasu SakaWorld Scientific Publishing Co. Pte. Ltd.[2021]<ND448-D2>
国立国会図書館
  • 内容細目Intro Contents Pr......ice 1.2 Miller Indices 1.3 Hexagonal Indices 1.4 Typic......cations 3.1 Definition of Disloc......d Dislocations in FCC 3.5 Super-Dislocations in Ordered Alloys and Intermetallic Com......ave 4.2 Scattering by a Single Atom 4.3 Scattering by a Unit Cel......tor 4.6 Broadening of Reciprocal Lattice Points Due to the Ou......attern and its Indexing 5.4 Kikuchi P......tern 5.5 Analyzing Diffraction P...... Specimen Containing Two Crystals: Analysis of O......lationship 5.6 Indexing Laue Zones Ch......harpness of an Interface in an Artificial ......rast of Planar Defects and Precipitat......ory 7.2 Planar Defects 7.3 Precipitates 7.4 Moire Fr...
  • 件名Crystal lattices--Defects Transmission electron microsc...
図書
Springerc2007.<PA47-B19>
国立国会図書館
  • 内容細目Space groups and crystalline structures Sy......ion of crystalline orbitals Hart......n correlations in molecules and crystals Semiempirical ......eudopotentials in periodic LCAO ......roperties Modeling and LCAO calculations of point defects in crystals Surface modeling in LCAO calculations of metal ox...
デジタル記事
Yoshinori Tanaka, Michal Tymczenko, Takashi Asano 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(8A) (通号 637) 2006.8p.6096~6102
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  • 掲載誌(国立国会図書館永続的識別子)info:ndljp/pid/11226707
  • 参照Second-harmonic generation in a silicon-carbide-based photo...
  • 参照...op filter by using a donor-type ......quality factor in a two-dimensio......tonic band gap in two-dimensiona......tal slabs Coupling between a point-defect cavity and a line-defect waveguide in three-dimensio...... Raman laser using a spherical d...... cavities Stopping and storing light coherently Investigation of point-defect cavity formed in two-dimensiona......ielectric cladding A perfectly m......tic waves Stopping Light All Opt......ly Theoretical investigation of ......vices Based on In-Plane Hetero Photonic Crystals Analysis of th......ocavities Trapping and emission ...... photons by a single defect in a photonic bandg...
デジタル記事
Kenji Harafuji, Katsuyuki Kawamura<Z53-A375>Japanese journal of applied physics : JJAP49(1) (1) 2010.1p.011001-1~7
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  • 掲載誌(国立国会図書館永続的識別子)info:ndljp/pid/11226773
  • 参照Molecular Dynamics of Ion Incident Angle De......ence of Sputtering Yield in Chlorine-Adsorbed GaN ......hemical sputtering of GaN crystal with a chlorine-adsorbed layer
  • 参照...active ion etching of Si by ener......ons Plasma-etching-enhanced deep centers in n-GaN grown by......e accumulation in GaN during ion beam irra......perties of strained wurtzite GaN and AlN:<i>Ab initio</i>studies......ls for the domain boundaries in epitaxial GaN ......active-ion etching induced damage in GaN Electron c...... resonance etching characteristics of GaN in SiCl4/Ar Chemical sputtering of Si related......ion for evaluating melting point of wurtzite-ty......active ion etching: surface roughening of silicon by chlorine Theory of Sputtering. I. Sputtering Yield of Amor......nd Polycrystalline Targets Molecular-dynamics s...
デジタル記事
Nikolai I. Puzanov, Anna M. Eidenzon, Dmitri N. Puzanov 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP41(2A) (通号 551) 2002.2p.464~471
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  • 要約等Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: <I>for crystals</I>, variable ......</I>), the lagging of crystalliz......e ˜<I>V</I> behind <I>V</I>, crystal length increasing with time <I>......e crystal-melt interface; <I>for native point defects</I>, transport with the moving crystal, Fick......e vacancy-self-interstitial recombination, and annealing at the crysta......established during crystal growt......e calculated using a global mode...... heat transfer in the system. Im......>V</I> and pulling halts are con......osition of the interstitial and vacancy regions...
  • 件名...n vacancy self-interstitial microdefect R-OSF b...
  • 掲載誌(国立国会図書館永続的識別子)info:ndljp/pid/11226620
記録メディア記事
野田 祐輔, 末岡 浩治<YH247-1397>日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth49(4):2022p.1-8
国立国会図書館全国の図書館
  • 並列タイトル等(連結)Theoretical Studies on Point Defects and Impurities in Semiconductor ......res by First-Principles Calculations
  • 並列タイトル等Theoretical Studies on Point Defects and Impurities in Semiconductor ......res by First-Principles Calculations
図書
安藤正海, 張小威, 杉山弘 編High Energy Accelerator Research Organization2012.9<ND371-L2>
国立国会図書館
  • 内容細目...nnihilation of point defects by doping impurities during FZ silicon crystal growth Intrinsic point defect behavior in silicon crystals during growth from t......著 Defect study in impurity doped......Si and related crystals Ichiro Yonenag......w medical beamline and its commissioning of PLS-Ⅱ Jae-Hong Lim ほか著 透過...
図書
J. Wileyc2008.<YU111-B697>
国立国会図書館全国の図書館
  • 内容細目Introduction Phys......properties of minerals Elements ......omposition of minerals Crystallo......l symmetry of minerals Internal order and symmetry in minerals Crystal p......tions Selected point groups and fur......tal growth and defects; twinning, color, and magnetism Mineral stability ......tion processes in minerals Optical m......ytical and imaging methods in mineral science Cr......ry of rock-forming silicates Sys......ns of rock-forming silicates Gem minerals Mineral assemblages: introduction to r......ck types Determinative tables Ap......es: 1. Outstanding contributions to the mineral sciences 2......ution of forms in 32 point groups, arranged by ...
  • 件名Mineralogy.
  • 並列タイトル等(連結)Manual of mineral science Mineral science
記事
陳 春平, 謝 成龍, 鐵田 大輔, 木川 駿, 穴田 哲夫, 張 沢君<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報117(16):2017.4.28p.29-34
国立国会図書館全国の図書館
  • 件名金属フォトニック結晶 点欠陥共振器 バンドギャップ 共振周波数 Q値 M-PhC point-defect cavity bandgap resonan...
記事
陳 春平, 謝 成龍, 鐵田 大輔, 木川 駿, 穴田 哲夫, 張 沢君<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報117(15):2017.4.28p.29-34
国立国会図書館
  • 件名金属フォトニック結晶 点欠陥共振器 バンドギャップ 共振周波数 Q値 M-PhC point-defect cavity bandgap resonan...
デジタル記事
Hisayuki Suematsu, Kiyoshi Yatsui, Toyohiko Yano<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP40(2B) (通号 534) 2001.2p.1097~1099
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  • 要約等...</SUB></FONT> single crystalline samples were ......was measured using a Vickers har......adiated sample increased by 23%.......ochronal annealing, the hardness......ed after annealing at 900°C. The......he sample also increased after t......on and changed in a similar mann......dness by annealing. A relationsh......ncentration of point defects is proposed an......plies that the point defects pin down the dislo......nerated by the indentation and increase the hardness of neutron...
  • 件名MgO・3.0Al2O3spinel neutron irradiation point defect
  • 掲載誌(国立国会図書館永続的識別子)info:ndljp/pid/11196226
記録メディア記事
向山 裕次, 末岡 浩治<YH247-1397>日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth49(4):2022p.1-8
国立国会図書館全国の図書館
  • 並列タイトル等(連結)Numerical simulations considering effects of th......he behavior of intrinsic point defects in Si crystal growing by Cz method
  • 並列タイトル等Numerical simulations considering effects of th......he behavior of intrinsic point defects in Si crystal growing by Cz method
記事
末岡 浩治, 神山 栄治, 中村 浩三 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報114(291):2014.11.6・7p.47-52
国立国会図書館全国の図書館
  • 件名Si結晶成長 点欠陥 熱応力 ドーパント 第一原理計算 Single crystal Si Intrinsic point defect Thermal......Dopant First principles calculation
  • 並列タイトル等(連結)Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon
  • 並列タイトル等Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon
デジタル記事
末岡 浩治<Z15-379>表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編37(3):2016.3p.116-121
国立国会図書館全国の図書館
  • 要約等The mechanisms behind the experimen......nal dopants on intrinsic point defect behavior in growing single crystal Si ......riate model of intrinsic point defect behavior in heavily doped ......ne has to take into account the ......rmal stress on intrinsic point defect behavior during single crystal Si growth. In order to explain the experiment......</i>) and self-interstitial (<i>......ress was determined using DFT calculati......a shifts a growing Si crystal to...... dependence is in excellent agre......hould be taken into account in the development of pulling processes for......defect-free Si crystals.
  • 件名defect-free Si intrinsic point defect density functional the...
  • 参照The mechanism of swirl defects formation in silicon Stress and doping impact on intrinsic point defect behavior in growing single crystal sil......he behavior of intrinsic point defects in large-diameter......defect-free Si crystals Density functi......ct of heavy doping on Si intrinsic point defect propert......lications for single crystal gro......the Melt/Solid Interface on the ......arge Diameter Single Crystal Si ......tent Equations Including Exchange and ......ects Erratum: “Intrinsic point defect incorporation in silicon single crystals grown from a m......2011)] Special points for Brillouin-zone integrations Generation ...
デジタル記事
2023-04-24Journal of Applied Physics133 16
全国の図書館
  • 要約等...of nitrogen doping, types of nitrogen-related defects, and their charge states in homoepitaxial diamond (001) crystals were investigated. For......ched free-standing chemical vapo...... diamond (001) crystals were grown thr......-time growth using 12C-enriched ...... the oxygen-adding growth condit....... Nitrogen was incorporated uniformly into the crystals, with a concen......ional nitrogen in a neutral char....... Hydrogen was incorporated at a......ers were predominantly negativel...... concentration in diamond crystals was controlled by changing the N/C gas r......over a wide doping range from 10...... ppm. Nitrogen incorporation efficiency was fou...
  • 参照Coherence of single spins coupled to a nuclear spin bath of varying density Nitrogen in Diamond Influence of CVD ......ns on nitrogen incorporation High NV density in a pink CVD diamond g......d paramagnetic defects: Decoherence s......ry of hydrogen in diamond A nitr......sity free-standing single crystal dia...... of NV centers in diamond An anomaly in the infrared absorpti......acancy centers in chemical vapor......iamond for sensing applications ...... photochromism in single crystal CVD......iamond Surface-induced charge st......trogen-vacancy defects in nanodiamonds M......iography of living rats with thoracotomy Identi...
  • 出版者(掲載誌)AIP Publishing
デジタル記事
2019-12-02Physical Review B100 24
全国の図書館
  • 参照Valley-Polarized Plasmonic Edge Mode Visualized in the Near-Infrared Spectral Range
  • 著者標目...o Lourenço-Martins Noémie Bonnet Xiaoyan Li Tra...
デジタル記事
2021-07-09Physical Review Letters127 2p.023605-
全国の図書館
  • 参照Analytical theory of finite-size photonic crystal slab...
  • 著者標目Sachin Vaidya Wladimir A. Benalcazar...
図書
Oleg VelichkoWorld Scientificc2020
全国の図書館
  • 件名Semiconductors -- Impurity distribution Silicon crystals -- Defects Silicon -- Inclusions
  • 件名(識別子)Semiconductors -- Impurity distribution Silicon crystals -- Defects Silicon -- Inclusions
  • 一般注記Includes bibliographical references and index
デジタル記事
2021-10Journal of Crystal Growth571p.126249-
全国の図書館
  • 件名Materials Chemistry Inorganic Chemistry Condensed Ma...
  • 参照The mechanism of swirl defects formation in silicon Comput......istribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter......ncentration of intrinsic point defects during Czochralski S......ffect on grown-in defects in Czochralski silicon crystals Density functi......ct of heavy doping on Si intrinsic point defect propert......lications for single crystal gro...... of void shape in Czochralski-Si wafers on the intensity of laser-scattering Nitrogen Dope......ly Homogeneous Internal Getter C......lities Special points for Brillouin-zone integrations Theo......of nitrogen-doping effects on void formation pr...