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- 内容細目Intro Contents Pr......Chapter 1 Studying Properties of Defects 1. Introduction 2. E......Defect Physics in 2D Nanomateria...... by TEM/STM 2. Instrumentation a......chnique 2.1. Principles of ADF-STEM and EELS in a TEM 2.2. Principles of STM a...... STS 3. Atomic Defects in 2D Transition ......cogenides 3.1. Point defects in monolayer MoS2......s and antisite defects 3.1.2. Defect ......ocal magnetism induced by antisite defects 3.2. Capturing the dynamics of point defects in MoS2 3.2.1. Mo......acancy 3.3. Grain/domain boundaries in MBE-grown MoSe2 3.4. Stacking-band structure diversity in bilayer MoSe2 ......ents Chapter 3 Defects in Perovskites for Solar Cell...
- 件名Materials--Defects
- 一般注記Chapter 7 Ferromagnetism in B2-Ordered Alloys Induced via Lattice Defects
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- 件名...-potential Korringa-Kohn-Rostoke......mation local spin density approximation vacancy...
- 著者標目Toshiharu Hoshino Toshiya Mizuno Mitsuhiro Asa...
- 出版者（掲載誌）Sendai : The Japan Institute of Metals and Materials ; 2001-
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- 件名...-potential Korringa-Kohn-Rostoke......mation local spin density approx......urity-impurity interaction energ...... of impurities in metal phase diagram
- 著者標目Mitsuhiro Asato Toshiya Mizuno Toshiharu Hoshino
- 出版者（掲載誌）Sendai : The Japan Institute of Metals and Materials ; 2001-
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- 件名first-principles calculations point defects semiconductors nitrides sulfi...
- 参照...s from first principles: A revie......ect of the damping function in dispersion cor......sorption Limit in InSb Point Defects and <mml:math......thML" display="inline"><mml:mi>p</m......math> -Type Doping in ScN from First Principles High‐Mob......y Direct Nitriding Synthesis and In Silico Doping Design Electr......efect Behavior in Zinc Tin Nitride Reveal......d from First Principles Revised ......tic studies of interatomic distances in halides and ch......ct Physics of Tin Sulfides: SnS,......thML" display="inline"><mml:mrow><m......thML" display="inline"><mml:mrow><m......ype conduction in SnS by anion substitution wit...
- 並列タイトル等Point Defects in Non-metallic Materials from First Principles
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- 内容細目Space groups and crystalline structures Sy......ion of crystalline orbitals Hart......n correlations in molecules and ......eudopotentials in periodic LCAO ......roperties Modeling and LCAO calculations of point defects in crystals Surface modeling in LCAO calculations of metal ox...
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- 件名金属フォトニック結晶 点欠陥共振器 バンドギャップ 共振周波数 Q値 M-PhC point-defect cavity bandgap resonan...
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- 件名金属フォトニック結晶 点欠陥共振器 バンドギャップ 共振周波数 Q値 M-PhC point-defect cavity bandgap resonan...
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- 参照Perspectives on multiscale modelling and experiments to accelerat...
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- 要約等...otropy (DA) of point defects in fcc and bcc metals in the presence o......th the crystalline structure and......phic direction in which the stre....... For example, interstitials in fcc metals diffuse faster in the plane of t......diffuse slower in-plane than out......ess is applied in the (111) plane. In contrast, an a......biaxial stress in the (001) plan......ts can be explained by considering the interaction of the defects at their saddle point configurations......ith the constraints imposed by t......lead to surprising results in a number of practical situati...
- 参照Strain Induced Quantum Effect in Semiconductors
- 著者標目Wai-Lun Chan Robert S. Averback Yinon Ashkenazy
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- 要約等...ccumulation of point defects and their interaction with pre-existing defects in crystalline solids under ......ments and also in the field of crystalline lattice defects. This review g......nt results obtained in the study of r......ic crystals, mainly concerning movements of point defect clusters and void grow...
- DOI10.2320/jinstmet.73.65
- 件名radiation damage voids interstitial type dislocation lo...
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- 件名Mechanical Engineering Condensed Mat......hemistry Bioengineering
- 参照Point defect detection and strain mapping in Si single crystal by ......stitutional doping
- 著者標目... Kim Antony Abhinandan Jenny Ardelean Micheal S...
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- 参照Perspectives on multiscale modelling and experiments to accelerat...
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- 要約等...he most common point defects in transition met......rmation energy in vacuum and the......nt observation in transmission e......tic properties in 2D-TMDs have b...... attributed to in-gap states ass......acancies, even in the absence of....... Here, we combine low-temperatu......croscopy, scanning tunneling microscopy an......-of-the-art ab initio density fu......tions to determine both the atom......chalcogen-site point defect common ......tively. Surprisingly, we observe no in-gap states. Ou......mmon chalcogen defects in the described ......tors, measured in vacuum environ......r gentle annealing, are oxygen substitutional d...
- 件名...ry Multidisciplinary
- 参照...ctronics Enhancing stability by tuning element ratio in 2D transition ......acteristics of defects on <mml:math xmlns:mml="http...
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- 件名electronic structure sulfides nitrides semiconductors point defects first-principles calculations
- 並列タイトル等（連結）Point Defects in Non-metallic Materials from First Principles
- 並列タイトル等Point Defects in Non-metallic Materials from First Principles
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- 件名Metals and Alloys Polymers and Plast...
- 参照...ed catalyst Ab Initio molecular ......acement energy in Zirconium Nitride
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- 件名General Physics and Astronomy General Engineering General Materials Science
- 参照...Defect and Strain On/Off Boundar......ivity between Single- and Bilayer MoS<sub>2</su...
- 著者標目...ong Bong Gyu Shin Seok Joon Yun Jaesu Kim Un Je...
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- 要約等... the p-type doping of choice for......ective area doping by ion implan......ation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, ......is known about defects generated by i......he case of Mg. In this study, we......aracterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2–1.2 eV......ochronal annealing behavior of t......f the detected defects is then discussed in the light of t...... results found in the literature.</jats:p>
- 参照...e Fermi level pinning and deep depletion in MOS diode with......tivation annealing Impact of low......perature annealing on defect lev......perature annealing behavior of defects in Mg-ion-implant...... GaN studied using MOS diodes an......ects of Dosage Increase on Elect......tivation Annealing Impact of defects on the electri......rmed by implanting Mg and H ions into N-polar GaN
- 出版者（掲載誌）AIP Publishing
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- 要約等...jats:italic>ab initio</jats:ital......tions, pre-melting phenomena hav......ested to occur in the elastic pr......of the Earth's inner core just before melting. The extent t...... these pre-melting effects might also occur in the physical p......-centred cubic metals has been investigated here......for gold, allowing for compariso......has been determined by X-ray pow...... up to the melting point (1337 K). For ......perature range investigated, the......be represented in the following way: a second......tate, with the internal energy c......ld shows a nonlinear increase in thermal expans......l prior to melting, which is probably a result ...
- 参照...anoparticles using picosecond pulsed electron b...
- 出版者（掲載誌）International Union of Crystallo...