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Improvement of Inlet System in Spray-Jet Molecular Beam Apparatus (Special Issue: Molecular Electronics and Bioelectronics)

Improvement of Inlet System in Spray-Jet Molecular Beam Apparatus (Special Issue: Molecular Electronics and Bioelectronics)
デジタル記事
Toshiki Yamada, Hidenori Shinohara, Toshiya Kamikado 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(1B) (通号 625) (Special Issue) 2006.1p.389～393
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  • 参照... proteins with molecular masses exceedi......copy Images of Molecular Overlayers Prepared by a New Molecular Beam Depositio......-Jet Technique Molecular-beam apparatus......molecules in a molecular beam produced ......alian cells. A molecular-beam apparatus with a spray-j...

Unintentional source incorporation in plasma-assisted molecular beam epitaxy

Unintentional source incorporation in plasma-assisted molecular beam epitaxy
デジタル記事
Fumitaro Ishikawa, Shudong Wu, Masakazu Kato 他<Z53-A375>Japanese journal of applied physics : JJAP48(12) 2009.12p.125501-1～5
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  • 参照...lasma-Assisted Molecular Beam Epitaxy U......lasma-assisted molecular beam epitaxy U......corporation in molecular beam epitaxial......lasma-assisted molecular beam epitaxy C......n GaN grown by molecular beam epitaxy R...... GaAs grown by molecular-beam epitaxy State-of-the-art...

Investigation on buffer layer for InN growth by molecular beam epitaxy

Investigation on buffer layer for InN growth by molecular beam epitaxy
紙デジタル記事
Yongzhao Yao, Takashi Sekiguchi, Takeshi Ohgaki 他<Z78-A504>Journal of the Ceramic Society of Japan = 日本セラミックス協会学術論文誌118(1374) 2010.2p.152～156
国立国会図書館全国の図書館
  • 要約等...lasma-assisted molecular beam epitaxy (PAMBE). For GaN...
  • 参照...lasma-assisted molecular beam epitaxy o......lasma-Assisted Molecular Beam Epitaxy w......y GaN grown by molecular beam epitaxy u......lasma-assisted molecular-beam epitaxy S...... InN growth by molecular-beam epitaxy G......lity InN by RF Molecular Beam Epitaxy. RF-Molecular Beam Epitaxy Growth and Prope...

Epitaxial growth of NdFeAsO thin films by molecular beam epitaxy

Epitaxial growth of NdFeAsO thin films by molecular beam epitaxy
紙記事
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno 他<Z78-A526>Applied physics express : APEX2(9) 2009.9p.093002-1～3
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Deep-hole traps in p-type GaAs1-xBi[x] grown by molecular beam epitaxy

Deep-hole traps in p-type GaAs1-xBi[x] grown by molecular beam epitaxy
紙記事
Takuma Fuyuki, Shota Kashiyama, Yoriko Tominaga 他<Z53-A375>Japanese journal of applied physics : JJAP50(8) (1) 2011.8p.080203-1～3
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In situ investigation of growth mechanism during molecular beam epitaxy of In-polar InN (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)

In situ investigation of growth mechanism during molecular beam epitaxy of In-polar InN (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
紙記事
Ke Wang, Tomohiro Yamaguchi, Tsutomu Araki 他<Z53-A375>Japanese journal of applied physics : JJAP50(1) (2) 2011.1p.01AE02-1～4
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Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy

Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy
紙デジタル記事
Sansaptak Dasgupta, Nidhi, Soojeong Choi 他<Z78-A526>Applied physics express : APEX4(4) 2011.4p.045502-1～3
国立国会図書館全国の図書館
  • 参照...films grown by molecular beam epitaxy P...... absorption in molecular-beam epitaxy-g......lasma-assisted molecular beam epitaxy S......lasma-assisted molecular beam epitaxy O......lasma-assisted molecular beam epitaxy

Strain dependence of formation mechanism of growth layer in molecular beam epitaxy of gallium nitride

Strain dependence of formation mechanism of growth layer in molecular beam epitaxy of gallium nitride
デジタル記事
Yasunori Kobayashi, Yusuke Doi, Akihiro Nakatani<Z53-A375>Japanese journal of applied physics : JJAP49(11) 2010.11p.115601-1～9
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  • 参照...tting films: A molecular dynamics simul......film growth: A molecular dynamics simul......N film growth: Molecular dynamics simul......nt temperature molecular dynamics methods Misfit-energ...

Influence of high-energy electron beam on source fluxes during molecular beam epitaxy growth on photoluminescence upconversion from the GaAs band gap

Influence of high-energy electron beam on source fluxes during molecular beam epitaxy growth on photoluminescence upconversion from the GaAs band gap
紙記事
David M. Tex, Itaru Kamiya<Z78-A526>Applied physics express : APEX4(6) 2011.6p.065501-1～3
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Ternary AlGaN alloys with high Al content and enhanced compositional homogeneity grown by plasma-assisted molecular beam epitaxy

Ternary AlGaN alloys with high Al content and enhanced compositional homogeneity grown by plasma-assisted molecular beam epitaxy
紙デジタル記事
Vincent Fellmann, Perine Jaffrennou, Diane Sam-Giao 他<Z53-A375>Japanese journal of applied physics : JJAP50(3) (1) 2011.3p.031001-1～7
国立国会図書館全国の図書館
  • 参照...ayers grown by molecular beam epitaxy A......lasma-assisted molecular beam epitaxy C......lasma-assisted molecular-beam epitaxy <......y GaN grown by molecular beam epitaxy u......lasma-assisted molecular-beam epitaxy u......ayers grown by molecular beam epitaxy H......lasma-assisted molecular beam epitaxy C......layer grown by molecular beam epitaxy D......+c Polarity by Molecular Beam Epitaxy Demonstration of...

Thin graphitic structure formation on various substrates by gas-source molecular beam epitaxy using cracked ethanol (Special issue: Solid state devices and materials)

Thin graphitic structure formation on various substrates by gas-source molecular beam epitaxy using cracked ethanol (Special issue: Solid state devices and materials)
紙記事
Fumihiko Maeda, Hiroki Hibino<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DH13-1～6
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ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy

ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy
紙デジタル記事
Zheng Yang, Sheng Chu, Winnie V. Chen 他<Z78-A526>Applied physics express : APEX3(3) 2010.3p.032101-1～3
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  • 参照... p-type ZnO by molecular-beam epitaxy p......lasma-assisted molecular beam epitaxy D......e ZnO films by molecular-beam epitaxy Ultraviolet emis...

Thin InSb films on GaAs substrates by molecular beam epitaxy (Special issue: Nano electronic materials)

Thin InSb films on GaAs substrates by molecular beam epitaxy (Special issue: Nano electronic materials)
デジタル記事
Zhanguo Li, Guojun Liu, Mei Li 他<Z53-A375>Japanese journal of applied physics : JJAP47(1) (Special Issue) 2008.1p.558～560
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  • 件名Molecular beam epitaxy MBE low temperat...
  • 参照...s substrate by molecular beam epitaxy Molecular beam epitaxial......films grown by molecular beam epitaxy

2D semiconductor materials and devices (Materials today)

2D semiconductor materials and devices (Materials today)
紙図書
edited by Dongzhi Chi, K.E. Johnson Goh, Andrew T.S. Wee.Elsevier[2020]<ND371-D6>
国立国会図書館
  • 内容細目...semiconductors Molecular beam epitaxy fabrication of t...

Performance improvement of molecular beam epitaxy grown InSb photodiodes for room temperature operation

Performance improvement of molecular beam epitaxy grown InSb photodiodes for room temperature operation
デジタル記事
Edson Gomes Camargo, Koichiro Ueno, Tomohiro Morishita 他<Z53-A375>Japanese journal of applied physics : JJAP47(11) 2008.11p.8430～8433
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Molecular beam epitaxy growth of superconducting NdFeAs(O,F) thin films using a F-getter and a novel F-doping method

Molecular beam epitaxy growth of superconducting NdFeAs(O,F) thin films using a F-getter and a novel F-doping method
紙デジタル記事
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno 他<Z78-A526>Applied physics express : APEX4(8) 2011.8p.083102-1～3
国立国会図書館全国の図書館
  • 参照Molecular Beam Epitaxy G...... Thin Films by Molecular Beam Epitaxy C...... thin films by molecular beam epitaxy Effect of<i>L</i...

Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy

Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy
デジタル記事
Motoki Satoh, Keisuke Arimoto, Kiyokazu Nakagawa 他<Z53-A375>Japanese journal of applied physics : JJAP47(6) (1) 2008.6p.4630～4633
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  • 件名SiGe molecular beam epitaxy Hall measurement...
  • 参照...layer on Si by molecular-beam epitaxy D......films grown by molecular beam epitaxy Acceptors in n-T...

Molecular beam epitaxy growth of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2

Molecular beam epitaxy growth of superconducting Sr1-xKxFe2As2 and Ba1-xKxFe2As2
紙記事
Soichiro Takeda, Shinya Ueda, Takeshi Yamagishi 他<Z78-A526>Applied physics express : APEX3(9) 2010.9p.093101-1～3
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Novel compound semiconductor nanowires : materials, devices, and applications

Novel compound semiconductor nanowires : materials, devices, and applications
紙図書
edited by Fumitaro Ishikawa, Irina A. Buyanova.Pan Stanford Publishing[2018]<ND351-B83>
国立国会図書館
  • 要約等...tal materials. Molecular beam and metalorganic vapor p...
  • 内容細目...coln J. Lauhon Molecular beam epitaxial......wires grown by molecular beam epitaxy : from quantum l...

Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy

Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy
紙記事
Tomohiro Yamaguchi, Yasushi Nanishi<Z78-A526>Applied physics express : APEX2(5) 2009.5p.051001-1～3
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