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Guide to semiconductor engineering

Guide to semiconductor engineering
紙図書
Jerzy RuzylloWorld Scientific Publishing Co. Pte. Ltd.[2020]<ND371-D24>
国立国会図書館全国の図書館
  • 要約等...rials, devices and process techno...... was conceived and written keepin......chnical domain and want to see it...... interested in semiconductors. In its covera......the physics of semiconductors and semiconductor ......ductor devices and circuits, and the characterization of semic...
  • 内容細目...eratomic bonds and electrical con...... 1.1.2 Energy band structure and electrical con.......2.1 Electrons and holes as carri......2.2 Generation and recombination ...... in motion 1.3 Semiconductors and External Inuen...... Semiconductor and electric and magnetic fields 1.3.2 Semiconductors and light 1.3.3 Semiconductors and temperature 1.4 Semiconductors in Nanoscale K......2.2.1 Surfaces and interfaces 2.2...... 2.3 Inorganic Semiconductors 2.3.1 Elemental semiconductors 2.3.2 Compound semiconductors 2.3.3 Nanoscale inorganic semiconductors 2.4 Materials ......ia 2.5 Organic Semiconductors 2.6 Bulk Single-Crystal Forma...
  • 件名Semiconductors Semiconductor industry Semiconductor industry. Semiconductors.

Handbook of magnetism and magnetic materials (Springer Nature reference)

Handbook of magnetism and magnetic materials (Springer Nature reference)
紙図書
J.M.D. Coey, Stuart S.P. Parkin, editorsSpringer[2021]<MC154-D2>
国立国会図書館全国の図書館
  • 要約等This handbook presents a......y of magnetism and magnetic mater......ion technology and electromagneti...... key knowledge and summarize the ......ers up-to-date and well-structure......rlying physics and materials scie......al methodology and applications. ......of fascinating and complex phenom......e.g. chemistry and biology. Edite......owned scholars and featuring auth......d, Springer's Handbook of Magnetism and Magnetic Mater......, researchers, and magnetism professionals
  • 内容細目Fundamentals History and Basic Concepts...... Nuclei, Atoms and Ions Exchange ......onic Structure Metals and Insulators Magnetic Order and Phase Transiti......Micromagnetism and Domains Magnet......ments Magnetic Metals and Alloys Magnetic Oxides and Insulators Organic and Molecular Magn......Fine Particles and Clusters Dilut......als.-Materials and Device Prepara......agnetic Fields and Measurements M......gnetic Imaging and Microscopy App......agnetic Memory and Logic Spin Cur......gnetochemistry and Separation Biomagnetism and Medical Applic......ions Planetary and Stellar Magnetism
  • 件名Magnetism--Handbooks, manuals,......ic materials--Handbooks, manuals, etc Magnétism...

GaN-based metal-semiconductor-metal ultraviolet photodetectors with the ZrO2 insulating layer (Special issue: Solid state devices and materials)

GaN-based metal-semiconductor-metal ultraviolet photodetectors with the ZrO2 insulating layer (Special issue: Solid state devices and materials)
紙記事
Chin-Hsiang Chen, Yu-Hsuan Tsai, Sung-Yi Tsai 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DG19-1～4
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Universal relationship between substrate current and history effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Universal relationship between substrate current and history effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Shuhei Amakawa, Asato Toda, Katsuroh Ohyama 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DC12-1～4
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Evaluation of electron and hole mobility at identical metal-oxide-semiconductor interfaces by using metal source/drain Ge-on-insulator metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Evaluation of electron and hole mobility at identical metal-oxide-semiconductor interfaces by using metal source/drain Ge-on-insulator metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe 他<Z53-A375>Japanese journal of applied physics : JJAP48(4) (2) 2009.4p.04C050-1～5
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Electrical properties of metal-insulator-semiconductor capacitors on freestanding GaN substrate (Special issue: Solid state devices and materials)

Electrical properties of metal-insulator-semiconductor capacitors on freestanding GaN substrate (Special issue: Solid state devices and materials)
紙記事
Eunhee Kim, Narumasa Soejima, Yukihiko Watanabe 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DF08-1～4
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Performance and stability of ZnO/ZnMgO hetero-metal-insulator-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Performance and stability of ZnO/ZnMgO hetero-metal-insulator-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
デジタル記事
Shigehiko Sasa, Takeo Hayafuji, Motoki Kawasaki 他<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2845～2847
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Cross-current silicon-on-insulator metal-oxide-semiconductor field-effect transistor and application to multiple voltage reference circuits (Special issue: Solid state devices and materials)

Cross-current silicon-on-insulator metal-oxide-semiconductor field-effect transistor and application to multiple voltage reference circuits (Special issue: Solid state devices and materials)
紙記事
Yasuhisa Omura<Z53-A375>Japanese journal of applied physics : JJAP48(4) (2) 2009.4p.04C071-1～5
国立国会図書館全国の図書館

Spin currents in semiconductors, metals, and insulators (Advances in spintronics)

Spin currents in semiconductors, metals, and insulators (Advances in spintronics)
紙デジタル記事
Naoto Nagaosa<Z53-A404>Journal of the Physical Society of Japan77(3) 2008.3p.031010-1～9
国立国会図書館全国の図書館
  • 要約等...in currents in semiconductors, metals and insulators are reviewed w......electric field and spin current, ......in Hall effect and multiferroic behavior as two ...
  • 参照...ort in organic semiconductors Inverse spin-H...... ferromagnetic metals Multiferroics ......in-Hall Effect and Diamagnetism of Dirac Electro...
  • 参照...Helical Liquid and the Edge of Qu......ological Order and the Quantum Sp...... spin currents and spin densities in and out of multite......ctures Energy bands in the presen......nt corrections and Berry-phase ef......Hall Effect in Semiconductors Tuning phase t......ntum spin Hall and ordinary insul......rry Potential, and the Meron Dire......metry Breaking and Ferroelectrici......y Spin Current and Magnetoelectri......Hall Effect in Semiconductors Heavy Fermion ......erconductivity and Magnetic Order......t Spin Current and Accumulation G......ons, disorder, and<mml:math xmlns......in Hall Effect and Topological Phase Transition ...

Metal-insulator-semiconductor diode characterization on n-GaN by capacitance-voltage measurement at 150℃ (Special issue: Solid state devices and materials)

Metal-insulator-semiconductor diode characterization on n-GaN by capacitance-voltage measurement at 150℃ (Special issue: Solid state devices and materials)
紙記事
Cheng-Yu Hu, Hiroyuki Nokubo, Masanari Okada 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DF11-1～3
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Effects of flat HfO2 films derived from diethanolamine solution on structure and properties of metal/ferroelectrics/insulator/semiconductor (Special issue: Ferroelectric materials and their applications)

Effects of flat HfO2 films derived from diethanolamine solution on structure and properties of metal/ferroelectrics/insulator/semiconductor (Special issue: Ferroelectric materials and their applications)
デジタル記事
Kazuyuki Suzuki, Kiyotaka Tanaka, Kazumi Kato<Z53-A375>Japanese journal of applied physics : JJAP47(9) (2) 2008.9p.7561～7564
インターネットで読める国立国会図書館全国の図書館
  • 参照...ion Deposition and Their Properti......ion Deposition and Their Properties
  • 参照...ce of Magnetic and Electric Order......nO3 film: New candidate for nonvo...... between YMnO3 and SrBi2Ta2O9 fer......>3</sub>(0001) and Pt(111)/Y<sub>2</sub>O<sub>3<...

Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Sheng-Chun Wang, Pin Su, Kun-Ming Chen 他<Z53-A375>Japanese journal of applied physics : JJAP48(4) (2) 2009.4p.04C041-1～4
国立国会図書館全国の図書館

Improvement of metal-insulator-semiconductor-type organic light-emitting transistors (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)

Improvement of metal-insulator-semiconductor-type organic light-emitting transistors (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)
デジタル記事
Kenji Nakamura, Takuya Hata, Atsushi Yoshizawa 他<Z53-A375>Japanese journal of applied physics : JJAP47(3) (2) 2008.3p.1889～1893
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Effect of Ge metal-insulator-semiconductor interfacial layers on interface trap density near the conduction band edge (Special issue: Solid state devices and materials)

Effect of Ge metal-insulator-semiconductor interfacial layers on interface trap density near the conduction band edge (Special issue: Solid state devices and materials)
紙記事
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DA09-1～6
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GaN metal-oxide-semiconductor field-effect transistor with tetraethylorthosilicate SiO2 Gate insulator on AlGaN/GaN heterostructure (Special issue: Solid state devices and materials)

GaN metal-oxide-semiconductor field-effect transistor with tetraethylorthosilicate SiO2 Gate insulator on AlGaN/GaN heterostructure (Special issue: Solid state devices and materials)
紙記事
Jin-Ping Ao, Katsutoshi Nakatani, Keisuke Ohmuro 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DF09-1～4
国立国会図書館全国の図書館

Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Shigeki Kobayashi, Masumi Saitoh, Yukio Nakabayashi 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DC23-1～5
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Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene) (Special issue: Ferroelectric materials and their applications)

Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene) (Special issue: Ferroelectric materials and their applications)
デジタル記事
Joo-Won Yoon, Byung-Eun Park, Hiroshi Ishiwara<Z53-A375>Japanese journal of applied physics : JJAP48(9) (2) 2009.9p.09KA21-1～4
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Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor (Special issue: Solid state devices and materials)

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor (Special issue: Solid state devices and materials)
紙記事
Yuji Iwasaki, Yoshiaki Nakamura, Jun Kikkawa 他<Z53-A375>Japanese journal of applied physics : JJAP50(4) (2) 2011.4p.04DA14-1～4
国立国会図書館全国の図書館

Atomic layer control for suppressing extrinsic defects in ultrathin SiON gate insulator of advanced complementary metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Atomic layer control for suppressing extrinsic defects in ultrathin SiON gate insulator of advanced complementary metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Satoshi Shimamoto, Hiroshi Kawashima, Toshiyuki Kikuchi 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DA19-1～7
国立国会図書館全国の図書館

Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
デジタル記事
Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa 他<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2668～2671
インターネットで読める国立国会図書館全国の図書館