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- 参照...acket Dynamics in Applied Electric Field Analytical Com......f Ballistic Cylindrical Nanowire......–Semiconductor Field-Effect Transis......ew solution to high-field transport in semiconductors (2) Velocity saturation and b...
- 参照Electronic Transport in Mesoscopic Sys......tion of charge transport in semiconductors with applicati......lent materials High‐field transport in semiconductors by transmissio......common sense points On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devi...... Hot electrons in one dimension ......stic electrons in an inhomogeneous sub...... of a nonabsorbing barrier Monte......dy of electron transport in silicon inversion layers ...... and Electrons in High Electric Fields Drift-diffusi...... for ballistic transport in nanoscale meta......-semiconductor field effect transistors Hot Electr...
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- 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226752
- 参照...acket Dynamics in Applied Electric Field Analytical Com......f Ballistic Cylindrical Nanowire......–Semiconductor Field-Effect Transis......ew solution to high-field transport in semiconductors (1) Elastic scattering without energy relaxation
- 参照Ballistic/quasi-ballistic transport in nanoscale tran...... Hot Electrons in Semiconductors The Bethe cond...... near an absorbing boundary Effe......ectron-plasmon interaction on th......ctron mobility in silicon The Mo......tion of charge transport in semiconductors with applicati......lent materials High‐field transport in semiconductors by transmissio......ier generation in very short cha......ical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devi......smission viewpoint Electron velocity in Si and GaAs at very high electric fields Drift Velocit...... Hot Electrons in<mml:math xmlns:mml="http://ww...
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- 要約等...ses the latest investigations into the electron...... of narrow-gap semiconductors in extreme condit...... and describes in detail magnetic field and pressure measurement using two high-quality single crystals: b......o significant findings for BP and P......f the pressure-induced transitio......r to semimetal in the electronic......ucture of BP using magnetoresist......nic properties in PbTe. The over......bTe from the point of view of ma......cently attract interest in topological features in condensed matt......ditionally the introductory review of the principles and meth......understand the high magnetic field and pressure e...
- 内容細目... 3.3.2 Quantum Transport Phenomena in Semiconducting Black Phospho...... 3.3.3 Quantum Transport Phenomena in Semimetallic B......nalyses of the In-Plane Transport Properties Bas......een Semiconducting and Semimetal......ric Transition in Pb1-xSnxTe 4.1......on; 4.3.1 Pristine PbTe at Ambie......nces; 5 Concluding Remarks; 5.1 ......Numerical Lock-In; 6.2 Data Acquisition with Te...
- 件名Narrow gap semiconductors. SCIENCE--Physics--Electricit...
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- 要約等<p>In this article, ......near the metal-insulator boundary in black phosphor...... as narrow-gap semiconductors with simple cr......tal structure. In such low carri......r systems with high mobility, the ......application of high magnetic field and high pressure. High pressure is a ......ul tool to continuously tune the band structure...
- 件名narrow-gap semiconductor semimetal magnetotransport pressure effect Diracness
- 参照Magnetic Oscillations in Metals
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- 内容細目Introduction to Photovoltaics. Introduction / Angèle Reinders, Wilfried ......rk, Pierre Verlinden Basic Functional Principles of Photo......es / Angèle Reinders Doping, Diffusion, and Defects in Solar Cells / Pierre Verlinden Absorption ...... Hubbard Recombination / Seth Hubbard Carrier Transport / Seth Hubbard......ubbard Crystalline Silicon Techn......Blakers, Ngwe Zin Interdigitated Ba......s / Pierre Verlinden Heterojunct...... Emitter Recombination Parameter......Contacts / Martin Hermle Light Management in Silicon Solar ......ion of Crystalline Silicon Solar......Concepts / Martin Green Chalcogenide Thin Film Solar Cells. Basics of C...
- 件名...ECHNOLOGY & ENGINEERING / Power Resources.
- 著者標目Reinders, Angèle.
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- 内容細目Introduction to c...... phenomenon during the crystal g......umerical modelling of crystal growth of binary compound semiconductors / T. Maekawa a......owth by travelling heater method in microgravity /......rdi Convective instability in Czochralski cr......ct of magnetic field in Czochralski si...... H. Ozoe Modelling of Czochralsk......crystal growth in turbulent flow......on and K.W. Yi Transport phenomena during growth of superconducting materials by ......K. Suzuki Modeling of high pressure liquid-encapsulated ...
- 件名Crystal growth. Transport theory. Semiconductors. Superconductors.
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- 内容細目Machine generated con......ote: The Gathering Storm Peak Oi......r Tame? Weathering the Storm Alt......gy The Bottom Line: The Need for Innovation Discus......ecommended Reading Energy Types ......f Energy Measuring Energy Heat Engines Rankine Cycle Heat Engine Stirling Cycle Heat Engine Principles of Basic......er Conductors, Semiconductors, and Insulators Static...... Electrostatic Fields Magnetism Mag......rth Difference in Potential Water Analogy Principal Methods for Producing Voltage Elect......ty Battery Terminology Voltaic C...... Operation Combining Cells Types o......rops Series Aiding and Opposing Sources Kirchof...
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- 要約等<jats:p>Though the high breakdown electric field of wide-bandgap semiconductors is usually att......ers and scattering processes on ......res and scattering rates on the high-field carrier transport properties suc......drift velocity in wide-bandgap semiconductors. For that purp......lo simulations in which the E–k ......ion and scattering rates are dir......and structures indicate that an ......group velocity in the whole Brillouin zone is a dominant factor determining the impact io......the band edge. In addition, the Brillouin zone width has...... As for scattering mechanisms, the roles of inelastic scattering processes i...
- 参照Tight-binding analysis of the effect of strain on the band structure of GaN
- 参照...device physics in SiC technology for high-voltage power ......act ionisation in semiconductors TRANSIENT RESP......TIONS Magnetic-Field-Induced Suppressi......nic Conduction in a Superlattice......ices Defect engineering in SiC technology for high-voltage power ......he Hall scattering factor in <i>n</i>-type ......harge carriers in semiconductors at high electric field Impact Ionizat......n Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power ......s and critical fields in 4H silicon carbide Combined description ......al and quantum transport in superlattices ......rimental Determination of Impact......s Along 〈1120〉 in 4H-SiC Impact ionization coef...
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- 要約等<p>In this article, ......near the metal-insulator boundary in black phosphor...... as narrow-gap semiconductors with simple cr......tal structure. In such low carri......r systems with high mobility, the ......application of high magnetic field and high pressure. High pressure is a ......ul tool to continuously tune the band structure...
- 件名Diracness pressure effect magnetotransport semimetal narrow-gap semicond...
- 並列タイトル等（連結）Quantum Transport Phenomena in Narrow-Gap Semiconductors under High Pressure and High Magnetic Field
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- 件名Semiconductors
- 件名（識別子）Semiconductors
- 関連情報Selected topics in electronics and systems
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- 要約等...:title><jats:p>High field transport in semiconductor is investigated by t......onal Boltzmann transport equation (BTE)...... without resorting to the relaxa......ion expansion. In case of elastic scattering without energ......f the electric field for a wide range of field. By inclusion of the ......ty to electric field, and showed a ...... of saturation in high‐field. The saturation in the high‐field is concluded t......ated at the beginning of channel. (...... & Co. KGaA, Weinheim)</jats:p>
- 参照New solution to high-field transport in semiconductors (1) Elastic scattering without energ......ew solution to high-field transport in semiconductors (2) Velocity saturation and b...
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- 出版者（掲載誌）IOP Publishing
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- 要約等...es and carrier transport in p-type metal-o......-semiconductor field-effect transis......re range under high magnetic fields. The sheet co......r the magnetic field of greater tha......scillations at higher gate voltage......f oscillations indicates that th......ted hole bands in bulk Si are split into the higher energy band ...... band (L band) in (110) pMOSFETs......the L band has higher hole mobilit...... 4×1012 cm−2. Since the μh of th...... is lower, the increase of the occupancy in the H band with an increase in Vg leads to th......ature local G minimum in G-Vg characteristics. The higher μh in the L band and the la...
- 参照Self-Heating Effects and A......timization of Fin-Type Field-Effect Transis......ogy for Evaluating Operation Temperatures of Fin-Type Field-Effect Transis......s Connected by Interconnect Wires
- 出版者（掲載誌）AIP Publishing
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- 目次・記事Contents I.Introduction 1.1 ...... of studies of high-field transport 1.3 Purpose an......paration 2.1 Principle and featu......on-hole scattering 4.4 Summary V.Undoped-like In₀.₅₂Al₀.₄₈As/In₀.₅₃Ga₀.₄₇As do......c devices with In₀.₅₂Al₀.₄₈As/In₀.₅₃Ga₀.₄₇As sy......E relationship in In₀.₅₃Ga₀.₄₇As VII.Concluding remarks Appen......al data processing A.1 ToF data ......analysis B.1 Principle B.2 Appli......on to compound semiconductors Appendix C.A m......on-hole scattering References
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