検索結果 16 件

デジタル記事
Shinji Kawaji, Tatsuji Igarashi, Jun-ichi Wakabayashi<Z53-A468>Progress of theoretical physics = 理論物理学の進歩 / Yukawa Institute for Theoretical Physics, Physical Society of Japan(通号 Suppl 57) 1975.11p.p176~186
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  • 参照...ntum transport in semiconductor ......s Hot Electron Effects in Landau Levels of MOS Inversion Layers Hall Effect in Silicon MOS Inversion Layers ......andau Subbands in MOS Structures......f Valley Splitting in an <I>N</I>-Channel (100) Inversion Layer o......ass Theory Scaling Functions in Quantum Hall Effect Screening Effect and Qu......ntum Transport in a Silicon Inversion Layer in Strong Magneti...... the Electrons in MOS Structures Induced by Strong Magnetic Field
  • 著者標目Shinji Kawaji Tatsuji Igarashi Jun...
デジタル記事
1980-11-20Journal of Physics C: Solid State Physics13 32p.5983-5997
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  • 要約等... effect, its main subeffects and applicatio......miconductor doping for the vario...... surface recombination rates, etc. In comparison wit......the well known intrinsic case, impor......ith the effect in slightly p-doped semiconductors. It is shown that during the magnetoco......ion effect, doping is responsibl......e Hall voltage increase, reduction or even inversion. The ef......ally a maximum in p-doped semiconductors; the optimum doping depends on th......n the magnetic induction. The ex...... 0.7 Omega are in good agreement with the compu...
  • 件名General Physics and Astronomy General Engineering Condensed Matter Physics
  • 参照... Emission from InSb Magneto-Infrared-Emitting Diode Characteristics of Luminescence from InSb Magneto-Infrared-Emitting Diode
図書
Albert C. BeerAcademic Press1963
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デジタル記事
1961-07-15Physical Review123 2p.454-463
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  • 参照Erratum: “Galvanomagnetic Effects of Warm-Electrons in Many-Valley Semiconductors” High field tr......port phenomena in n-InSb at high temperatures
デジタル記事
1961-05-01Journal of Applied Physics32 5p.800-805
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  • 要約等...ue problem arising from the continuity equation in an inhomogeneous sem......conductor, leading to rotational......ted weak-field effects are especially significant in degenerate semiconductors and n-type III–V intermetallics where the ``intrinsic'' magnetore......ance is small. In strong fields,......mall gradients in carrier concen......mental results indicate that tra......h do not occur in the simple cas......sed, do appear in general, and f......esistance. The influence of inhomogeneous magnetic fields is...
  • 参照Galvanomagnetic Properties in Inhomogeneous Indium Antimonide at 77°K Galvanomagnetic Effects in Magnesium Stan......ctron Mobility InSb Films Prepared by Source-Te...
  • 出版者(掲載誌)AIP Publishing
デジタル記事
1973-02physica status solidi (b)55 2p.687-696
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  • 要約等...itle><jats:p>Using the contraction mapping principle, we show ......istics are obtained. The mathema......lectron scattering mechanisms an...... problems, but in particular, Hall effects and magnetores......are considered in group [V, III‐V, and II‐VI semiconductors and semimetals......ls considered. In addition, meas......ll factor (rH) in GaAs from 0.1 to 90 kG are co...
  • 参照...Concentrations in LPE InP Layers Electr......alculations of In<sub>0.53</sub>.......47</sub>As Taking the Two-Mode ......ice Vibrations into Account
デジタル記事
1956-11-01Proceedings of the Physical Society. Section B69 11p.1101-1108
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  • 件名General Medicine
  • 参照Galvanomagnetic Effects in Cadmium Antimo......muth Telluride Galvanomagnetic effects in bismuth selenide Bi2Se3
  • 出版者(掲載誌)IOP Publishing
図書
安藤, 恒也, Ando, TsuneyaProc. 11th Int. Conf. Physics of Semiconductors, Warsaw, 1972 (PWN-Polish Scientific Publishers, Warsaw, 1972)1972Proc. 11th Int. Conf. Physics of Semiconductors, Warsaw, 1972 (PWN-Polish Scientific Publishers, Warsaw, 1972)1p.294-305
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デジタル記事
1970-09Solid-State Electronics13 9p.1223-1230
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  • 件名... Electronic Engineering Condensed Matter Physics Ele...
  • 参照Effects of Magnetic Fi......Characteristic in Gallium Arsenide
デジタル記事
Tsutsumi Osamu1964Journal of the Physical Society of Japan19 8p.1290-1309
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  • 要約等...nd anisotropic effects of galvanomagnetic coefficients f......warm electrons in many-valley semiconductors is presented. ......applied to solving the Boltzmann......warm electrons in many-valley semiconductors, with scattering by acoustical......, and thus obtaining expressions for the galvanomagnetic coefficients in any crystallog......<BR>All of the galvanomagnetic coefficients f......warm electrons in <I>n</I>-Ge can be obtained in the form of th......nd that everything so obtained has anisotropy effects and decreases with increasing the electric ......tic fields.<BR>In the very stron......lattice scattering only, has the electric field...
デジタル記事
Tsutsumi Osamu1964Journal of the Physical Society of Japan19 11p.2246C-2246C
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デジタル記事
1964JPSJ19 11p.2246C-2246C
全国の図書館
  • 要約等...nd anisotropic effects of galvanomagnetic coefficients f......warm electrons in many-valley semiconductors is presented. ......applied to solving the Boltzmann......warm electrons in many-valley semiconductors, with scattering by acoustical......, and thus obtaining expressions for the galvanomagnetic coefficients in any crystallog......<BR>All of the galvanomagnetic coefficients f......warm electrons in <I>n</I>-Ge can be obtained in the form of th......nd that everything so obtained has anisotropy effects and decreases with increasing the electric ......tic fields.<BR>In the very stron......lattice scattering only, has the electric field...
  • 参照...polar Crystals in the Strong Ele......tron Phenomena in<mml:math xmlns......thML" display="inline"><mml:mi>n</m......manium Longitudinal Magnetoresistance in the Quantum Li......ctron-Electron Interaction in Hot Electron P......from Ohm's law in germanium and ...... hot electrons in germanium Hall......oresistance of Semiconductors due to Hot Carriers in High Magnetic ...... Hot Electrons in Many-Valley Semiconductors Hot-Electron Behavior in Germanium under the Influence of a Ma......rrier mobility in silicon and ge......s of Electrons in High Electric ......ields Mobility in high-resistivi......f Hot-Electron Effects in Many-Valley Semiconductors...
デジタル記事
1961-07-01Review of Scientific Instruments32 7p.842-846
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  • 要約等...measurement of galvanomagnetic effects in high resistance semiconductors is described. ......ances fall within the range 10−1...... also be determined with the app......fficient measuring equipment.</jats:p>
  • 件名Instrumentation
  • 出版者(掲載誌)AIP Publishing

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