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Springer handbook of semiconductor devices

Springer handbook of semiconductor devices
紙図書
Massimo Rudan, Rossella Brunetti, Susanna Reggiani, editorsSpringer[2023]<ND371-D34>
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  • 要約等This Springer Handbook co......devices, embracing all aspects f......rication, modeling, and applicat......Nearly 100 leading scientists from industry and acad...... electrical engineers working at universities, industrial R&D, a......acturers. Starting from the desc......voted to the main conventional s......nsistors, used in the production......f the standard integrated circui...... the corresponding physical models. In the subsequent......pters, the scaling issues of the......on methods ranging from the fabr......r is self-contained, and refers ......topics treated in other chapters......hat the reader interested in a specific subject...
  • 件名Semiconductors Semiconductors.
  • 一般注記Includes index

Control of Spin Precession and Relaxation by Diffusion in Semiconductor Quantum Wells

書影書影書影
Control of Spin Precession and Relaxation by Diffusion in Semiconductor Quantum Wells
デジタル博士論文障害者向け資料あり
IIZASA, DAISUKE2021-03-25
国立国会図書館
  • 国立国会図書館永続的識別子info:ndljp/pid/12361325

Theory of electron transport in semiconductors : a pathway from elementary physics to nonequilibrium green functions / Carlo Jacoboni. (Springer series in solid-state sciences ; 165)

Theory of electron transport in semiconductors : a pathway from elementary physics to nonequilibrium green functions / Carlo Jacoboni. (Springer series in solid-state sciences ; 165)
紙図書
Springerc2010.<ND371-B51>
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  • 内容細目Pt. I. Basic concepts in semiconductor ...... dynamics ; 8. Semiconductors Pt. II. Semicl......ical transport in bulk semiconductors: 9. Electronic interactions ; 10......quation ; 11. Linear transport ; 12. Diffusion, fluctuations,......oise ; 13. Nonlinear transport ;......roperties of main semiconductors Pt. III. Quantum transport in bulk semiconductors: 16. Quantum transport in homogeneous sy...... IV. Transport in semiconductor ......tructures: 18. Inhomogeneous and open.
  • 件名Semiconductors. Electron transport. Halbleit...

Electronic processes in organic electronics : bridging nanostructure, electronic states and device properties (Springer series in materials science ; volume 209)

Electronic processes in organic electronics : bridging nanostructure, electronic states and device properties (Springer series in materials science ; volume 209)
紙図書
Hisao Ishii, Kazuhiro Kudo, Takashi Nakayama, Nobuo Ueno editorsSpringerc2015<ND351-B65>
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  • 内容細目Bridging structure, el......s mott-hubbard insulator by potassium doping Fabio Bussolo......著 Vertical bonding distances imp...... organic-metal interface energet......ter Alexander Hinderhofer ほか著 Ph......c material and interfaces Hisao ...... Mobility limiting factors in practical polycrystalline organic thin films Ryosuke ......nic light emitting diode (OLED) ...... of metal-arom diffusion in organic system......i Ishii 著 Bridging different fie......y molecular tiling Toshihiko Fuj...... ほか著 Understanding of unique the......o Nishikawa 著 Single molecular spintronics Toyo Kazu Yamada 著 Vor...
  • 関連情報Springer series in materials science
  • 掲載誌Springer series in materials science

An analytical model of surface electric field distributions in ultrahigh-voltage buried P-top lateral diffused metal-oxide-semiconductor devices

An analytical model of surface electric field distributions in ultrahigh-voltage buried P-top lateral diffused metal-oxide-semiconductor devices
デジタル記事
Gene Sheu, Shao-Ming Yang, Yi-Fong Chang 他<Z53-A375>Japanese journal of applied physics : JJAP49(7) (1) 2010.7p.074301-1～8
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  • 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226786
  • 著者標目Gene Sheu Shao-Ming Yang Yi-Fong Chang

Nano/micro science and technology in biorheology : principles, methods, and applications

Nano/micro science and technology in biorheology : principles, methods, and applications
紙図書
Rio Kita, Toshiaki Dobashi editorsSpringerc2015<RA71-B534>
国立国会図書館全国の図書館
  • 内容細目Introduction of n......and technology in biorheology Ri......nal flow birefringence investigation of ...... Shuji Fujii 著 Diffusion and thermal diffusion by means of dy......c light scattering and laser hol......phy Rio Kita 著 Diffusion measurements o......r and polymers in hydrogels by p......gradient NMR Shingo Matsukawa, T......terials, and skin investigated by m......spectroscopy Shin Yagihara 著 Dyn......ymer, and protein studied by bro......oscopy Naoki Shinyashiki 著 Biorh......ts application in tissue engineering Kazuya Furusawa 著 Sensing of biomolecul......Sakata 著 From single-molecule DNA imaging to development of a gene del...

Mechanism and modeling of n-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors (Special issue: Solid state devices and materials)

Mechanism and modeling of n-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors (Special issue: Solid state devices and materials)
紙記事
Jone F. Chen, Kuen-Shiuan Tian, Shiang-Yu Chen 他<Z53-A375>Japanese journal of applied physics : JJAP48(4) (2) 2009.4p.04C040-1～4
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Advances in the application of lasers in materials science (Springer series in materials science ; volume 274)

Advances in the application of lasers in materials science (Springer series in materials science ; volume 274)
紙図書
Paolo M. Ossi, editor.Springer[2018]<ND451-B65>
国立国会図書館全国の図書館
  • 要約等...s and progress in understanding both the fund......ence of lasers interactions in materials scie......phasis on emerging applications ...... of the processing conditions, l......ion can result in efficient mate......m atomically-thin 2D materials t...... employ lasers in materials science, spanning such different disciplines as photonics......taics, and sensing, to biomedical applications.
  • 内容細目Intro; Preface; C......thesis, Processing, and Spectros......f Atomically-Thin Two Dimensiona......Materials; 1.1 Introduction; 1.2......Key Challenges in the Synthesis ......f Atomically-Thin 2D Materials w......sis and Processing of 2D Materia...... Up" Defect Engineering of 2D Crystal...... 1.3.4 Laser Thinning of Layered Tw......tion and Annealing of TMDs; 1.3.7 Laser-Induced Phase Con......sis and Processing of Atomically-Thin 2D Materials; ...... 1.4.3 Photoluminescence Spectro......ole of Defects in Pulsed Laser Matter Interaction2.1 Introduction; 2.2 Intrinsic Defects; 2.......dence of Laser-Induced Threshold Fluences; 2.3 ...
  • 件名...rs on. Lasers--Industrial applic......echnology & Engineering--Material Sci......echnology & Engineering--Manufacturing. Electronic d......ysics) Tool making. Technology & Engineering--Lasers & Pho...... and Molecules in Strong Fields, Laser Matter Interaction. Surface and Interface Science, Thin Films. Manufacturing, Machines, Tools.

Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors : From Bulk GaN to (In,Ga)N Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)

Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors : From Bulk GaN to (In,Ga)N Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)
紙記事
Ramunas Aleksiejunas, Patrik Scajev, Saulius Nargelas 他<Z53-A375>Japanese journal of applied physics : JJAP52(8)(2):2013.8p.08JK01-1-5
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An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
デジタル記事
Kuen-Shiuan Tian, Jone F. Chen, Shiang-Yu Chen 他<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2641～2644
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高純度同位体を用いた半導体中の自己拡散現象の解明 (応用物理の基盤を支える元素・組成分析技術)

高純度同位体を用いた半導体中の自己拡散現象の解明 (応用物理の基盤を支える元素・組成分析技術)
紙デジタル記事
松本 智<Z15-243>応用物理80(11) 2011.11p.987-990
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  • 要約等...また自己拡散において空孔機構とinterstitialcy機構の両方が関与することを示し，その...
  • 件名silicon self-diffusion pure ³ºSi isot......ro-structure point defects vacancy mechanism interstitialcy mechanism fermi-l...
  • 並列タイトル等（連結）Self-diffusion in semiconductors using highly pure isotope heterost...

Turn-around of threshold voltage in gate bias stressed p-channel power vertical double-diffused metal-oxide-semiconductor transistors

Turn-around of threshold voltage in gate bias stressed p-channel power vertical double-diffused metal-oxide-semiconductor transistors
デジタル記事
Vojkan Davidovic, Ninoslav Stojadinovic, Danijel Dankovic 他<Z53-A375>Japanese journal of applied physics : JJAP47(8) (1) 2008.8p.6272～6276
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  • 件名VDMOS turn-around threshold voltage gate bias stress interface traps oxide charge
  • 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226741
  • 著者標目Vojkan Davidovic Ninoslav Stojadinovic Danijel Dankovic

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate (2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate (2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
紙記事
村上 秀樹, 森脇 嘉一, 藤竹 正仁 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報104(156) 2004.7.1p.67～71
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Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate (2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate (2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
紙記事
村上 秀樹, 森脇 嘉一, 藤竹 正仁 他<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報104(153) 2004.7.1p.67～71
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Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors (Special issue: Solid state devices and materials)

Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors (Special issue: Solid state devices and materials)
デジタル記事
Shiang-Yu Chen, Jone F. Chen, Kuo-Ming Wu 他<Z53-A375>Japanese journal of applied physics : JJAP47(4) (2) 2008.4p.2645～2649
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  • 掲載誌（国立国会図書館永続的識別子）info:ndljp/pid/11226463
  • 著者標目Shiang-Yu Chen Jone F. Chen Kuo-Ming Wu

Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
紙記事
Jone F. Chen, Kuo-Ming Wu, J. R. Lee 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(4B) (通号 650) (Special Issue) 2007.4p.2019～2022
国立国会図書館全国の図書館
  • 著者標目Jone F. Chen Kuo-Ming Wu J. R. Lee
  • 出版者（掲載誌）...cs through the Institute of Pure and Applied Ph...

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots (Special Issue : Recent Advances in Nitride Semiconductors)

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots (Special Issue : Recent Advances in Nitride Semiconductors)
紙記事
Benjamin P. L. Reid, Tongtong Zhu, Timothy J. Puchtler 他<Z53-A375>Japanese journal of applied physics : JJAP52(8)(2):2013.8p.08JE01-1-4
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  • 著者標目Benjamin P. L. Reid Tongtong Zhu Timot...

Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)

Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
紙記事
Hans-Michael Solowan, Julia Danhof, Ulrich T. Schwarz<Z53-A375>Japanese journal of applied physics : JJAP52(8)(2):2013.8p.08JK07-1-5
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Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
紙記事
Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita 他<Z53-A375>Japanese journal of applied physics : JJAP52(8)(2):2013.8p.08JK12-1-3
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Ultra Shallow Boron Diffusion in SIMOX and UNIBOND Structures (2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)

Ultra Shallow Boron Diffusion in SIMOX and UNIBOND Structures (2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
紙記事
内田 秀雄, 市川 正也, 荒井 英輔<Z16-940>電子情報通信学会技術研究報告 = IEICE technical report : 信学技報100 (通号 149) 2000.06.30p.91～95
国立国会図書館