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IEEE Transactions on Semiconductor Manufacturing

IEEE Transactions on Semiconductor Manufacturing
紙記録メディア雑誌
Institute of Electrical and Electronics Engineers<Z54-G271>
国立国会図書館全国の図書館
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Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations

Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations
デジタル記事
2023-11IEEE Transactions on Semiconductor Manufacturing36 4p.543-546
全国の図書館
  • 掲載誌（ISSN）08946507

Machine Learning-Based Process-Level Fault Detection and Part-Level Fault Classification in Semiconductor Etch Equipment

Machine Learning-Based Process-Level Fault Detection and Part-Level Fault Classification in Semiconductor Etch Equipment
デジタル記事
2022-05IEEE Transactions on Semiconductor Manufacturing35 2p.174-185
全国の図書館
  • 掲載誌（ISSN）08946507

Improvement of Virtual Diagnostics Performance for Plasma Density in Semiconductor Etch Equipment Using Variational Auto-Encoder

Improvement of Virtual Diagnostics Performance for Plasma Density in Semiconductor Etch Equipment Using Variational Auto-Encoder
デジタル記事
2022-05IEEE Transactions on Semiconductor Manufacturing35 2p.256-265
全国の図書館
  • 掲載誌（ISSN）08946507

Virtual Metrology for Etch Profile in Silicon Trench Etching With SF₆/O₂/Ar Plasma

Virtual Metrology for Etch Profile in Silicon Trench Etching With SF₆/O₂/Ar Plasma
デジタル記事
2022-02IEEE Transactions on Semiconductor Manufacturing35 1p.128-136
全国の図書館
  • 掲載誌（ISSN）08946507

Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application

Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.323-327
全国の図書館
  • 掲載誌（ISSN）08946507

Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control

Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.408-419
全国の図書館
  • 掲載誌（ISSN）08946507

Chamber and Recipe-Independent FDC Indicator in High-Mix Semiconductor Manufacturing

Chamber and Recipe-Independent FDC Indicator in High-Mix Semiconductor Manufacturing
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.301-306
全国の図書館
  • 掲載誌（ISSN）08946507

The Effect of Si Surface Flattening Process on the MISFET With High-k HfN<sub>x</sub> Multilayer Gate Dielectrics

The Effect of Si Surface Flattening Process on the MISFET With High-k HfN<sub>x</sub> Multilayer Gate Dielectrics
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.328-332
全国の図書館
  • 掲載誌（ISSN）08946507

Data-Driven Model Predictive Control of Cz Silicon Single Crystal Growth Process With V/G Value Soft Measurement Model

Data-Driven Model Predictive Control of Cz Silicon Single Crystal Growth Process With V/G Value Soft Measurement Model
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.420-428
全国の図書館
  • 掲載誌（ISSN）08946507

Model-Free Adaptive Iterative Learning Control Method for the Czochralski Silicon Monocrystalline Batch Process

Model-Free Adaptive Iterative Learning Control Method for the Czochralski Silicon Monocrystalline Batch Process
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.398-407
全国の図書館
  • 掲載誌（ISSN）08946507

Improvement of ZnO/Si Heterojunctions With a Coaxial Circular Transmission Line Model Applicable to Both Ohmic and Schottky

Improvement of ZnO/Si Heterojunctions With a Coaxial Circular Transmission Line Model Applicable to Both Ohmic and Schottky
デジタル記事
2021-08IEEE Transactions on Semiconductor Manufacturing34 3p.256-261
全国の図書館
  • 掲載誌（ISSN）08946507

Layout Feature Extraction Using CNN Classification in Root Cause Analysis of LSI Defects

Layout Feature Extraction Using CNN Classification in Root Cause Analysis of LSI Defects
デジタル記事
2021-05IEEE Transactions on Semiconductor Manufacturing34 2p.153-160
全国の図書館
  • 掲載誌（ISSN）08946507

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si<sub>0.8</sub>Ge<sub>0.2</sub> by Controlling CF<sub>4</sub> Atmosphere With Ar and O<sub>2</sub> Additives in ICP

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si<sub>0.8</sub>Ge<sub>0.2</sub> by Controlling CF<sub>4</sub> Atmosphere With Ar and O<sub>2</sub> Additives in ICP
デジタル記事
2021-05IEEE Transactions on Semiconductor Manufacturing34 2p.177-184
全国の図書館
  • 掲載誌（ISSN）08946507

Machine Learning Models for Edge Placement Error Based Etch Bias

Machine Learning Models for Edge Placement Error Based Etch Bias
デジタル記事
2021-02IEEE Transactions on Semiconductor Manufacturing34 1p.42-48
全国の図書館
  • 掲載誌（ISSN）08946507

CNN-Based Layout Segment Classification for Analysis of Layout-Induced Failures

CNN-Based Layout Segment Classification for Analysis of Layout-Induced Failures
デジタル記事
2020-11IEEE Transactions on Semiconductor Manufacturing33 4p.597-605
全国の図書館
  • 掲載誌（ISSN）08946507

Application of ANN for Fault Detection in Overhead Transport Systems for Semiconductor Fab

Application of ANN for Fault Detection in Overhead Transport Systems for Semiconductor Fab
デジタル記事
2020-08IEEE Transactions on Semiconductor Manufacturing33 3p.337-345
全国の図書館
  • 掲載誌（ISSN）08946507

Extracting Voltage Dependence of BTI-induced Degradation Without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators

Extracting Voltage Dependence of BTI-induced Degradation Without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators
デジタル記事
2020-05IEEE Transactions on Semiconductor Manufacturing33 2p.174-179
全国の図書館
  • 掲載誌（ISSN）08946507

Layout Pattern Synthesis for Lithography Optimizations

Layout Pattern Synthesis for Lithography Optimizations
デジタル記事
2020-05IEEE Transactions on Semiconductor Manufacturing33 2p.283-290
全国の図書館
  • 掲載誌（ISSN）08946507

Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs

Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs
デジタル記事
2020-05IEEE Transactions on Semiconductor Manufacturing33 2p.150-158
インターネットで読める全国の図書館
  • 掲載誌（ISSN）08946507