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IEEE electron device letters

IEEE electron device letters
紙記録メディア雑誌
Institute of Electrical and Electronics Engineers<Z54-A763>
国立国会図書館全国の図書館
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Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes
デジタル記事
2023-07IEEE Electron Device Letters44 7p.1172-1175
全国の図書館
  • 掲載誌（ISSN）07413106

Fast Switching NO₂-Doped p-Channel Diamond MOSFETs

Fast Switching NO₂-Doped p-Channel Diamond MOSFETs
デジタル記事
2023-05IEEE Electron Device Letters44 5p.793-796
全国の図書館
  • 掲載誌（ISSN）07413106

Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n<sup>−</sup> Region Under Negative Bias Stress and Light Irradiation

Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n<sup>−</sup> Region Under Negative Bias Stress and Light Irradiation
デジタル記事
2023-05IEEE Electron Device Letters44 5p.765-768
全国の図書館
  • 掲載誌（ISSN）07413106

Digitize the Human Body by Backscattering Based Nano-Tattoos: Battery-Free Sensing

Digitize the Human Body by Backscattering Based Nano-Tattoos: Battery-Free Sensing
デジタル記事
2023-05IEEE Electron Device Letters44 5p.849-852
全国の図書館
  • 掲載誌（ISSN）07413106

An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band

An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band
デジタル記事
2023-04IEEE Electron Device Letters44 4p.682-685
全国の図書館
  • 掲載誌（ISSN）07413106

Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED

Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED
デジタル記事
2023-03IEEE Electron Device Letters44 3p.500-503
全国の図書館
  • 掲載誌（ISSN）07413106

1651-V All-Ion-Implanted Schottky Barrier Diode on Heteroepitaxial Diamond With 3.6 × 10⁵ On/Off Ratio

1651-V All-Ion-Implanted Schottky Barrier Diode on Heteroepitaxial Diamond With 3.6 × 10⁵ On/Off Ratio
デジタル記事
2023-02IEEE Electron Device Letters44 2p.293-296
全国の図書館
  • 掲載誌（ISSN）07413106

3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates

3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates
デジタル記事
2023-01IEEE Electron Device Letters44 1p.112-115
全国の図書館
  • 掲載誌（ISSN）07413106

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor
デジタル記事
2023-01IEEE Electron Device Letters44 1p.100-103
インターネットで読める全国の図書館
  • 掲載誌（ISSN）07413106

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors
デジタル記事
2022-10IEEE Electron Device Letters43 10p.1713-1716
インターネットで読める全国の図書館
  • 掲載誌（ISSN）07413106

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update
デジタル記事
2022-09IEEE Electron Device Letters43 9p.1467-1470
全国の図書館
  • 掲載誌（ISSN）07413106

Gate Reliability of Schottky-Type <i>p</i>-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias

Gate Reliability of Schottky-Type <i>p</i>-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias
デジタル記事
2022-09IEEE Electron Device Letters43 9p.1404-1407
全国の図書館
  • 掲載誌（ISSN）07413106

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide
デジタル記事
2022-08IEEE Electron Device Letters43 8p.1227-1230
全国の図書館
  • 掲載誌（ISSN）07413106

3326-V Modulation-Doped Diamond MOSFETs

3326-V Modulation-Doped Diamond MOSFETs
デジタル記事
2022-08IEEE Electron Device Letters43 8p.1303-1306
全国の図書館
  • 掲載誌（ISSN）07413106

SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K

SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K
デジタル記事
2022-07IEEE Electron Device Letters43 7p.997-1000
全国の図書館
  • 掲載誌（ISSN）07413106

C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication

C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication
デジタル記事
2022-06IEEE Electron Device Letters43 6p.910-913
全国の図書館
  • 掲載誌（ISSN）07413106

875-MW/cm² Low-Resistance NO₂ p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs

875-MW/cm² Low-Resistance NO₂ p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs
デジタル記事
2022-05IEEE Electron Device Letters43 5p.777-780
全国の図書館
  • 掲載誌（ISSN）07413106

Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO<sub>x</sub>/HfZrO Gate Insulator by 2 Step Sequential Ar/O<sub>2</sub> Treatment

Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO<sub>x</sub>/HfZrO Gate Insulator by 2 Step Sequential Ar/O<sub>2</sub> Treatment
デジタル記事
2022-05IEEE Electron Device Letters43 5p.725-728
全国の図書館
  • 掲載誌（ISSN）07413106

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
デジタル記事
2022-04IEEE Electron Device Letters43 4p.588-591
全国の図書館
  • 掲載誌（ISSN）07413106