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Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

デジタル記事

2007-07Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures25 4p.1481-1490

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掲載誌（ISSN）0734211X

Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering

デジタル記事

2007-07Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures25 4p.1495-1503

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掲載誌（ISSN）0734211X

Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering

デジタル記事

Hasegawa, Hideki, Akazawa, MasamichiAVS Science & Technology of Materials, Interfaces, and Processing2007-07Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures25 4p.1495-1503

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Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

デジタル記事

Akazawa, Masamichi, Hasegawa, HidekiAVS Science & Technology of Materials, Interfaces, and Processing2007-07Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures25 4p.1481-1490

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Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

デジタル記事

2006-07-26Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.2087-2092

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掲載誌（ISSN）0734211X

Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

デジタル記事

Sato, Taketomo, Oikawa, Takeshi, Hasegawa, Hideki, Hashizume, TamotsuAVS Science & Technology of Materials, Interfaces, and Processing2006-07-26Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.2087-2092

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Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure

デジタル記事

Kokawa, Takuya, Sato, Taketomo, Hasegawa, Hideki, Hashizume, TamotsuAVS Science & Technology of Materials, Interfaces, and Processing2006-07-25Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.1972-1976

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Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure

デジタル記事

2006-07-25Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.1972-1976

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掲載誌（ISSN）0734211X

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

デジタル記事

Kotani, Junji, Kaneko, Masamitsu, Hasegawa, Hideki, Hashizume, TamotsuAVS Science & Technology of Materials, Interfaces, and Processing2006-07Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.2148-2155

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Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

デジタル記事

2006-07Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.2148-2155

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掲載誌（ISSN）0734211X

Smoothing of polycrystalline copper with rough surface by oblique argon-ion irradiation

デジタル記事

2006-07Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.1918-1921

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掲載誌（ISSN）0734211X

Smoothing of polycrystalline copper with rough surface by oblique argon-ion irradiation

デジタル記事

Hino, T., Nakai, T., Nishikawa, M., Hirohata, Y., Yamauchi, Y.AVS Science & Technology of Materials, Interfaces, and Processing2006-07Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures24 4p.1918-1921

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Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

紙雑誌

Published for the American Vacuum Society by the American Institute of Physics<Z53-Y133>

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Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

デジタル記事

2004-05Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures22 3p.1432-1435

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掲載誌（ISSN）0734211X

Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

デジタル記事

Yoh, Kanji, Ohno, Hiroshi, Sueoka, Kazuhisa, Ramsteiner, Manfred E.American Vacuum Society2004-05Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures22 3p.1432-1435

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Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms

デジタル記事

Li, Tu-Qiang, Noda, Suguru, Okada, Fumio, Komiyama, HiroshiAmerican Institute of Physics2003-11Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena21 6p.2512-2516

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掲載誌（ISSN）0734211X

Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms

デジタル記事

2003-11Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena21 6p.2512-2516

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掲載誌（ISSN）0734211X

Physics and chemistry of semiconductor interfaces : 15th Annual conference : Feb 1988, Asilomar, CA. (Journal of Vacuum Science and Technology B ; 6(4))

紙図書

American Institute of Physics1988.<M17-89-1456>

国立国会図書館

GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser

紙記事

青柳, 克信, Aoyagi, Yoshinobu2001J. Vac. Sci. Technol. B19p.1388-

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GaN ablation etching by simultaneous irradiation with F_2_ laser and KrF excimer laser

紙記事

青柳, 克信, Aoyagi, Yoshinobu2001J. Vac. Sci. Technol. B19p.1388-

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