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Journal of vacuum science & technology A Vacuum, surfaces, and films : an official publication of the American Vacuum Society

Journal of vacuum science & technology A Vacuum, surfaces, and films : an official publication of the American Vacuum Society
紙雑誌
Published for the American Vacuum Society by the American Institute of Physics<Z53-Y132>
国立国会図書館
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Spatial distribution diagnosis of electron temperature and density of argon inductively coupled plasma by tomographic optical emission spectroscopic measurement and collisional-radiative model

Spatial distribution diagnosis of electron temperature and density of argon inductively coupled plasma by tomographic optical emission spectroscopic measurement and collisional-radiative model
紙記事
山下, 雄也, Yamashita, Yuya, 石, 健太, Ishi, Kenta, 渡邊, 修平, Watanabe, Shuhei, 菊地, 航行, Kikuchi, Wataru, 根津, 篤, Nezu, Atsushi, 赤塚, 洋, AKATSUKA, HIROSHIAIP Publishing2024-01J. Vac. Sci. Technol. A42 No. 2p.023003-
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Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO2 surfaces

Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO2 surfaces
デジタル記事
2023-02-27Journal of Vacuum Science & Technology A41 2
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  • 掲載誌（ISSN）07342101

Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions

Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions
デジタル記事
2023-02-07Journal of Vacuum Science & Technology A41 2
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  • 掲載誌（ISSN）07342101

Moisture barrier coating of AlN and Al2O3 multilayer film prepared by low-temperature atomic layer deposition

Moisture barrier coating of AlN and Al2O3 multilayer film prepared by low-temperature atomic layer deposition
デジタル記事
2022-11-11Journal of Vacuum Science & Technology A40 6
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  • 掲載誌（ISSN）07342101

Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions

Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions
デジタル記事
2022-11-03Journal of Vacuum Science & Technology A40 6p.063006-
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  • 掲載誌（ISSN）07342101

High thickness uniformity of 2-in. wafer-scale <i>β</i>-Ga2O3 films grown by MOCVD and photoelectrical properties

High thickness uniformity of 2-in. wafer-scale <i>β</i>-Ga2O3 films grown by MOCVD and photoelectrical properties
デジタル記事
2022-10-31Journal of Vacuum Science & Technology A40 6p.062702-
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  • 掲載誌（ISSN）07342101

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
デジタル記事
2022-10-31Journal of Vacuum Science & Technology A40 6
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  • 掲載誌（ISSN）07342101

Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy

Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy
デジタル記事
2022-09-30Journal of Vacuum Science & Technology A40 6
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  • 掲載誌（ISSN）07342101

Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation

Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation
デジタル記事
2022-09-01Journal of Vacuum Science & Technology A40 5p.053007-
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  • 掲載誌（ISSN）07342101

Temporal evolution of the ion flux to the target in rotational RF multimagnetron plasma

Temporal evolution of the ion flux to the target in rotational RF multimagnetron plasma
デジタル記事
2022-08-31Journal of Vacuum Science & Technology A40 5
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  • 掲載誌（ISSN）07342101

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Molecular dynamics simulation of Si trench etching with SiO2 hard masks
デジタル記事
2022-08-10Journal of Vacuum Science & Technology A40 5p.053004-
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  • 掲載誌（ISSN）07342101

Negative ion beam bombardment of a protic ionic liquid: Alleviating surface charging and damage and analyzing the surface of organic insulating materials

Negative ion beam bombardment of a protic ionic liquid: Alleviating surface charging and damage and analyzing the surface of organic insulating materials
デジタル記事
2022-08-09Journal of Vacuum Science & Technology A40 5
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VO2 films on flexible thin polyimide films: Fabrication and characterization of electrical and optical properties in insulator-metal transition

VO2 films on flexible thin polyimide films: Fabrication and characterization of electrical and optical properties in insulator-metal transition
デジタル記事
2022-06-28Journal of Vacuum Science & Technology A40 4
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  • 掲載誌（ISSN）07342101

Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption

Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption
デジタル記事
2022-06-23Journal of Vacuum Science & Technology A40 4
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  • 掲載誌（ISSN）07342101

Relationship between local coordinates and thermal conductivity in amorphous carbon

Relationship between local coordinates and thermal conductivity in amorphous carbon
デジタル記事
2022-04-19Journal of Vacuum Science & Technology A40 3p.033408-
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  • 掲載誌（ISSN）07342101

Crystal structure analysis of stacking faults through scanning transmission electron microscopy of β-Ga2O3 (001) layer grown via halide vapor phase epitaxy

Crystal structure analysis of stacking faults through scanning transmission electron microscopy of β-Ga2O3 (001) layer grown via halide vapor phase epitaxy
デジタル記事
2022-04-12Journal of Vacuum Science & Technology A40 3p.032701-
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Origin of enhanced thermal atomic layer etching of amorphous HfO2

Origin of enhanced thermal atomic layer etching of amorphous HfO2
デジタル記事
2022-02-28Journal of Vacuum Science & Technology A40 2
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  • 掲載誌（ISSN）07342101

Room-temperature atomic layer deposition of iron oxide using plasma excited humidified argon

Room-temperature atomic layer deposition of iron oxide using plasma excited humidified argon
デジタル記事
2022-02-25Journal of Vacuum Science & Technology A40 2
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Optoelectronic properties of transparent oxide semiconductor <i>A</i>SnO3 (<i>A</i> = Ba, Sr, and Ca) epitaxial films and thin film transistors

Optoelectronic properties of transparent oxide semiconductor <i>A</i>SnO3 (<i>A</i> = Ba, Sr, and Ca) epitaxial films and thin film transistors
デジタル記事
2022-02-04Journal of Vacuum Science & Technology A40 2
全国の図書館
  • 掲載誌（ISSN）07342101