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Solid-state electronics

Solid-state electronics
紙記録メディア雑誌
Pergamon Press<Z53-F36>
国立国会図書館全国の図書館
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Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations

Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations
デジタル記事
2023-03Solid-State Electronics201p.108589-
全国の図書館
  • 掲載誌（ISSN）00381101

A proposal of quantum computing algorithm to solve Poisson equation for nanoscale devices under Neumann boundary condition

A proposal of quantum computing algorithm to solve Poisson equation for nanoscale devices under Neumann boundary condition
デジタル記事
2023-02Solid-State Electronics200p.108547-
全国の図書館
  • 掲載誌（ISSN）00381101

Fabrication of transparent ZnO/Cu-Mg(OH)2 heterojunction diodes by electrochemical deposition

Fabrication of transparent ZnO/Cu-Mg(OH)2 heterojunction diodes by electrochemical deposition
デジタル記事
2022-12Solid-State Electronics198p.108479-
全国の図書館
  • 掲載誌（ISSN）00381101

Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O21

Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O21
デジタル記事
2021-12Solid-State Electronics186p.108170-
全国の図書館
  • 掲載誌（ISSN）00381101

Diamond Schottky p-i-n diodes for high power RF receiver protectors

Diamond Schottky p-i-n diodes for high power RF receiver protectors
デジタル記事
2021-12Solid-State Electronics186p.108154-
全国の図書館
  • 掲載誌（ISSN）00381101

Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates

Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates
デジタル記事
2021-12Solid-State Electronics186p.108070-
全国の図書館
  • 掲載誌（ISSN）00381101

Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas

Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas
デジタル記事
2021-11Solid-State Electronics185p.108096-
全国の図書館
  • 掲載誌（ISSN）00381101

Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation
デジタル記事
2021-11Solid-State Electronics185p.108128-
全国の図書館
  • 掲載誌（ISSN）00381101

Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale

Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale
デジタル記事
2021-10Solid-State Electronics184p.108086-
全国の図書館
  • 掲載誌（ISSN）00381101

Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces

Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces
デジタル記事
2021-09Solid-State Electronics183p.108115-
全国の図書館
  • 掲載誌（ISSN）00381101

Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique

Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique
デジタル記事
2021-06Solid-State Electronics180p.107993-
全国の図書館
  • 掲載誌（ISSN）00381101

Trapping effects on AlGaN/GaN HEMT characteristics

Trapping effects on AlGaN/GaN HEMT characteristics
デジタル記事
2021-02Solid-State Electronics176p.107929-
全国の図書館
  • 掲載誌（ISSN）00381101

Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation

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デジタル記事
Kono, Hiroshi, 大村, 一郎Elsevier2020-09-08Solid-State Electronics177p.107884-1-107884-12
全国の図書館

Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation

Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation
デジタル記事
2020-09-08Solid-State Electronics177p.107884-1-107884-12
全国の図書館
  • 掲載誌（ISSN）00381101

Performance and reliability improvement in Ge(1 0 0) nMOSFETs through channel flattening process

Performance and reliability improvement in Ge(1 0 0) nMOSFETs through channel flattening process
デジタル記事
2020-07Solid-State Electronics169p.107816-
全国の図書館
  • 掲載誌（ISSN）00381101

Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM

Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
デジタル記事
2020-06Solid-State Electronics168p.107730-
全国の図書館
  • 掲載誌（ISSN）00381101

A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence

A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence
デジタル記事
2020-04Solid-State Electronics166p.107764-
全国の図書館
  • 掲載誌（ISSN）00381101

Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations

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デジタル記事
Torimi, Satoshi, Obiyama, Yoshiki, Tsukuda, Masanori, 大村, 一郎Elsevier2020-02-05Solid-State Electronics166p.107770-1-107770-7
全国の図書館

Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations

Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations
デジタル記事
2020-02-05Solid-State Electronics166p.107770-1-107770-7
全国の図書館
  • 掲載誌（ISSN）00381101