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Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments
デジタル記事
2014-05Journal of Vacuum Science & Technology B32 3
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  • 掲載誌（ISSN）00225355

Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

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デジタル記事
Tsuda, Hirotaka, Nakazaki, Nobuya, Takao, Yoshinori, Eriguchi, Koji, 斧, 高一American Institute of Physics2014-05Journal of Vacuum Science & Technology B32 3
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Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

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デジタル記事
Osano, Yugo, 斧, 高一AIP Publishing2008-08-13Journal of Vacuum Science & Technology B26 4p.1425-1439
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Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles
デジタル記事
2008-08-13Journal of Vacuum Science & Technology B26 4p.1425-1439
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  • 掲載誌（ISSN）00225355

Dry etching characteristics of TiN film using Ar/CHF_3_, Ar/Cl_2_, and Ar/BCl_3_ gas chemicals in an inductively coupled plasma

Dry etching characteristics of TiN film using Ar/CHF_3_, Ar/Cl_2_, and Ar/BCl_3_ gas chemicals in an inductively coupled plasma
紙記事
大見, 俊一郎, OHMI, SHUN-ICHIRO2003J. Vac. Sci. Technol.B21 5p.2163-2168
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Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices
紙記事
水田, 博, Mizuta, Hiroshi2003J. Vac. Sci. Technol.B 21p.1000-1003
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Evidence of storing and erasing of electrons in nanocrystalline-Si based memory device at 77K

Evidence of storing and erasing of electrons in nanocrystalline-Si based memory device at 77K
紙記事
小田, 俊理, ODA, SHUNRI2002Journal of Vacuum Science and TechnologyB20(3)p.1135-1138
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Defect formation and structural alternation in modified SiO_2_ glasses by irradiation with F2 laser or ArF excimer laser

Defect formation and structural alternation in modified SiO_2_ glasses by irradiation with F2 laser or ArF excimer laser
紙記事
細野, 秀雄, HOSONO, HIDEO2000J.Vac.Sci.Technol.B18p.2891-
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Degradatoin behavior and mechanism in SiO_2_ glasses by excimer lase: comparison between F_2_ and ArF laser

Degradatoin behavior and mechanism in SiO_2_ glasses by excimer lase: comparison between F_2_ and ArF laser
紙記事
細野, 秀雄, HOSONO, HIDEO2000J.Vac.Sci.Tech.18p.2916-
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Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices

Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices
紙記事
小田, 俊理, ODA, SHUNRI2000Journal of Vacuum Science and Technology18 6p.2857-2861
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Electron Temperature, Density, and Metastabl-atom Density of Argon Electron-Cyclotron-Resonance Plasma Dischared by 7.0, 8.0 and 9.4 GHz Microwaves

Electron Temperature, Density, and Metastabl-atom Density of Argon Electron-Cyclotron-Resonance Plasma Dischared by 7.0, 8.0 and 9.4 GHz Microwaves
紙記事
鈴木, 達也, Suzuki, Tatsuya2000J. Vacuum Sci. & Technol.18 5p.2207-2212
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Insertion process and electrical conduction of conjugated molecules in n-alkanethiol self-assembled monolayers on Au(111)

Insertion process and electrical conduction of conjugated molecules in n-alkanethiol self-assembled monolayers on Au(111)
紙記事
藤平, 正道, Fujihira, Masamichi2000J. Vac. Sci. Technol.A18p.1437-1442
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F doped and H_2_-impregnated synthetic SiO_2_ Glasses for 157 nm Optics

F doped and H_2_-impregnated synthetic SiO_2_ Glasses for 157 nm Optics
紙記事
細野, 秀雄, HOSONO, HIDEO1999J. Vac. Sci. Teshnol.17p.3280-3285
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25nm ptich GaInAs/InP buried structure:improvement by calixarene as EB resist ane TBP as P-source in OMVPE regrowth

25nm ptich GaInAs/InP buried structure:improvement by calixarene as EB resist ane TBP as P-source in OMVPE regrowth
紙記事
古屋, 一仁, FURUYA, KAZUHITO1998J. Vac. Sci. Technol.B16 12
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Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator

Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator
紙記事
宮本, 恭幸, MIYAMOTO, YASUYUKI1998J. Vac. Sci. Technol.B16 2p.851-
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MIS Emitter with Epitaxial CaF2 Layer as Insulator

MIS Emitter with Epitaxial CaF2 Layer as Insulator
紙記事
浅田, 雅洋, ASADA, MASAHIRO1998J.Vac.Sci.Tech.B16 2p.851-
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Generation of Optical Absorption Bands in CaF_2_ Single Crystals by ArF Excimer Laser Irradiation: Effect of yttrium impurity

Generation of Optical Absorption Bands in CaF_2_ Single Crystals by ArF Excimer Laser Irradiation: Effect of yttrium impurity
紙記事
細野, 秀雄, HOSONO, HIDEO1998J.Vac.Sci.Technol. A16p.3052-58
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Journal of vacuum science & technology

Journal of vacuum science & technology
紙雑誌
Published for the American Vacuum Society by the American Institute of Physics<Z53-M259>
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Epitaxial Growth of a Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Heterostructure and Its Application to Quantum-Effect Devices

Epitaxial Growth of a Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Heterostructure and Its Application to Quantum-Effect Devices
紙記事
浅田, 雅洋, ASADA, MASAHIRO1995Journal of Vacuum Science and TechnologyA-13 3p.623-628
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Hydrogen annealing effect on SHG from SiO2/Si(111) interfaces

Hydrogen annealing effect on SHG from SiO2/Si(111) interfaces
紙記事
平山, 博之, HIRAYAMA, HIROYUKI1995Journal of Vacuum Science & TechnologyA13p.750-752
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